IPW65R041CFD vs STI38N65M5 Сравнение
Подробное сравнение бок о бок IPW65R041CFD от Infineon и STI38N65M5 от STMicroelectronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ АктивенСравнение характеристик
| Параметр | IPW65R041CFD | STI38N65M5 |
|---|---|---|
| Бренд | Infineon | STMicroelectronics |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $4,68 | $2,19 |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement | — |
| Technology | CoolMOS CFD2 (superjunction, fast body diode) | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 650 V | — |
| On-Resistance RDS(on) | 41 mOhm | — |
| Continuous Drain Current ID | 68.5 A (Tc) | — |
| Power Dissipation PD | 500 W (Tc) | — |
| Total Gate Charge Qg | 300 nC | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS rating] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| Body Diode | Integrated fast body diode | — |
| Корпус | PG-TO247-3 (TO-247, through-hole) | TO-247 |
| Тип монтажа | Through Hole | Through Hole |
| Package Color / Material | Green plastic (halogen-aware molding per digchip listing) | — |
| Статус RoHS | Compliant (GREEN package per digchip specification listing) | Compliant |
| Application Segment | Industrial | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at 25°C | — | 38 A |
| Continuous Drain Current (ID) at 100°C | — | 24 A |
| Pulsed Drain Current (IDM) | — | 152 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.099 ohm (typical) |
| Total Gate Charge (Qg) | — | 110 nC |
| Input Capacitance (Ciss) | — | 4200 pF |
| Output Capacitance (Coss) | — | 180 pF |
| Reverse Transfer Capacitance (Crss) | — | 12 pF |
| Avalanche Energy (EAS) | — | 1.2 J |
| Диапазон рабочих температур | — | -55°C to +150°C |
| Без галогенов | — | Yes |