IPW65R041CFD vs STI38N65M5 对比
详细并排对比 IPW65R041CFD 出自 Infineon 和 STI38N65M5 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ 量产中规格对比
| 参数 | IPW65R041CFD | STI38N65M5 |
|---|---|---|
| 品牌 | Infineon | STMicroelectronics |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.68 | $2.19 |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement | — |
| Technology | CoolMOS CFD2 (superjunction, fast body diode) | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 650 V | — |
| On-Resistance RDS(on) | 41 mOhm | — |
| Continuous Drain Current ID | 68.5 A (Tc) | — |
| Power Dissipation PD | 500 W (Tc) | — |
| Total Gate Charge Qg | 300 nC | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS rating] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| Body Diode | Integrated fast body diode | — |
| 封装 | PG-TO247-3 (TO-247, through-hole) | TO-247 |
| 安装类型 | Through Hole | Through Hole |
| Package Color / Material | Green plastic (halogen-aware molding per digchip listing) | — |
| RoHS 状态 | Compliant (GREEN package per digchip specification listing) | Compliant |
| Application Segment | Industrial | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at 25°C | — | 38 A |
| Continuous Drain Current (ID) at 100°C | — | 24 A |
| Pulsed Drain Current (IDM) | — | 152 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.099 ohm (typical) |
| Total Gate Charge (Qg) | — | 110 nC |
| Input Capacitance (Ciss) | — | 4200 pF |
| Output Capacitance (Coss) | — | 180 pF |
| Reverse Transfer Capacitance (Crss) | — | 12 pF |
| Avalanche Energy (EAS) | — | 1.2 J |
| 工作温度范围 | — | -55°C to +150°C |
| 无卤 | — | Yes |