IR2101STRPBF vs IR2101PBF Сравнение
Подробное сравнение бок о бок IR2101STRPBF от Infineon и IR2101PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IR2101STRPBF | IR2101PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,68 | $0,78 |
| Configuration | Half-Bridge (High-Side and Low-Side), Independent | Half-Bridge (High and Low Side) |
| Number of Drivers | 2 | 2 (High-Side + Low-Side) |
| Driver Type | Non-Inverting | — |
| Maximum Offset Voltage | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (Typ.) | 210 mA | — |
| Sink Current (Typ.) | 360 mA | — |
| Propagation Delay (Typ.) | 160 ns | — |
| Rise Time (Typ.) | [DATA_NEEDED: rise time] | — |
| Fall Time (Typ.) | [DATA_NEEDED: fall time] | — |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V CMOS/LSTTL | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| Bootstrap Diode | Integrated | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Negative Transient Immunity on VS | Yes (dV/dt immune) | — |
| Корпус | 8-SOIC (0.154 inch, 3.90 mm Width) | 8-PDIP (0.300 inch, 7.62 mm) |
| Тип монтажа | Surface Mount | Through-Hole |
| Рабочая температура | -40 C to +125 C | -40C to +125C |
| Уровень MSL | MSL 3 | — |
| Статус RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Input Type | — | Non-Inverting |
| Количество выходов | — | 2 |
| Supply Voltage (VCC/VBS) | — | 10 V to 20 V |
| Peak Source Current | — | 0.21 A (210 mA) |
| Peak Sink Current | — | 0.36 A |
| Offset (High-Side) Voltage | — | Up to +600 V |
| Propagation Delay | — | 160 ns |
| Undervoltage Lockout | — | Yes |
| dV/dt Immunity | — | Yes (negative transient tolerant) |
| Packaging | — | Tube |