IR2101STRPBF vs IR2101PBF Comparison

Detailed side-by-side comparison of IR2101STRPBF by Infineon and IR2101PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2101STRPBF IR2101PBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-Bridge (High-Side and Low-Side), Independent Half-Bridge (High and Low Side)
Number of Drivers 2 2 (High-Side + Low-Side)
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V, 5 V, 15 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Package 8-SOIC (0.154 inch, 3.90 mm Width) 8-PDIP (0.300 inch, 7.62 mm)
Mounting Type Surface Mount Through-Hole
Operating Temperature -40 C to +125 C -40C to +125C
MSL Level MSL 3 —
RoHS Status Compliant Compliant (Pb-free PBF suffix)
Input Type — Non-Inverting
Number of Outputs — 2
Supply Voltage (VCC/VBS) — 10 V to 20 V
Peak Source Current — 0.21 A (210 mA)
Peak Sink Current — 0.36 A
Offset (High-Side) Voltage — Up to +600 V
Propagation Delay — 160 ns
Undervoltage Lockout — Yes
dV/dt Immunity — Yes (negative transient tolerant)
Packaging — Tube

Datasheets & Resources

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