IR2101STRPBF vs IR2101PBF Vergleich
Detaillierter Direktvergleich von IR2101STRPBF von Infineon und IR2101PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2101STRPBF | IR2101PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,78 |
| Configuration | Half-Bridge (High-Side and Low-Side), Independent | Half-Bridge (High and Low Side) |
| Number of Drivers | 2 | 2 (High-Side + Low-Side) |
| Driver Type | Non-Inverting | — |
| Maximum Offset Voltage | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (Typ.) | 210 mA | — |
| Sink Current (Typ.) | 360 mA | — |
| Propagation Delay (Typ.) | 160 ns | — |
| Rise Time (Typ.) | [DATA_NEEDED: rise time] | — |
| Fall Time (Typ.) | [DATA_NEEDED: fall time] | — |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V CMOS/LSTTL | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| Bootstrap Diode | Integrated | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Negative Transient Immunity on VS | Yes (dV/dt immune) | — |
| Gehäuse | 8-SOIC (0.154 inch, 3.90 mm Width) | 8-PDIP (0.300 inch, 7.62 mm) |
| Montageart | Surface Mount | Through-Hole |
| Betriebstemperatur | -40 C to +125 C | -40C to +125C |
| MSL-Level | MSL 3 | — |
| RoHS-Status | Compliant | Compliant (Pb-free PBF suffix) |
| Input Type | — | Non-Inverting |
| Anzahl der Ausgänge | — | 2 |
| Supply Voltage (VCC/VBS) | — | 10 V to 20 V |
| Peak Source Current | — | 0.21 A (210 mA) |
| Peak Sink Current | — | 0.36 A |
| Offset (High-Side) Voltage | — | Up to +600 V |
| Propagation Delay | — | 160 ns |
| Undervoltage Lockout | — | Yes |
| dV/dt Immunity | — | Yes (negative transient tolerant) |
| Packaging | — | Tube |