IR2101STRPBF vs IR2101PBF 비교
다음의 상세 나란히 비교: IR2101STRPBF 제조: Infineon 및 IR2101PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IR2101STRPBF | IR2101PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.68 | $0.78 |
| Configuration | Half-Bridge (High-Side and Low-Side), Independent | Half-Bridge (High and Low Side) |
| Number of Drivers | 2 | 2 (High-Side + Low-Side) |
| Driver Type | Non-Inverting | — |
| Maximum Offset Voltage | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (Typ.) | 210 mA | — |
| Sink Current (Typ.) | 360 mA | — |
| Propagation Delay (Typ.) | 160 ns | — |
| Rise Time (Typ.) | [DATA_NEEDED: rise time] | — |
| Fall Time (Typ.) | [DATA_NEEDED: fall time] | — |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V CMOS/LSTTL | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| Bootstrap Diode | Integrated | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Negative Transient Immunity on VS | Yes (dV/dt immune) | — |
| 패키지 | 8-SOIC (0.154 inch, 3.90 mm Width) | 8-PDIP (0.300 inch, 7.62 mm) |
| 실장 유형 | Surface Mount | Through-Hole |
| 동작 온도 | -40 C to +125 C | -40C to +125C |
| MSL 레벨 | MSL 3 | — |
| RoHS 상태 | Compliant | Compliant (Pb-free PBF suffix) |
| Input Type | — | Non-Inverting |
| 출력 수 | — | 2 |
| Supply Voltage (VCC/VBS) | — | 10 V to 20 V |
| Peak Source Current | — | 0.21 A (210 mA) |
| Peak Sink Current | — | 0.36 A |
| Offset (High-Side) Voltage | — | Up to +600 V |
| Propagation Delay | — | 160 ns |
| Undervoltage Lockout | — | Yes |
| dV/dt Immunity | — | Yes (negative transient tolerant) |
| Packaging | — | Tube |