IR2104SPBF vs 2ED2103S06FXUMA1 Сравнение
Подробное сравнение бок о бок IR2104SPBF от Infineon и 2ED2103S06FXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IR2104SPBF | 2ED2103S06FXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,41 | $0,94 |
| Функция | Half-bridge gate driver | Half-Bridge Gate Driver |
| Number of Drivers | 2 (high-side + low-side) | 2 (high-side + low-side) |
| Configuration | High and Low Side | Non-Inverting |
| Input Type | Logic (non-inverting) | — |
| Maximum Offset / Bootstrap Supply Voltage | 600 V | — |
| Gate Drive Supply Range (VCC) | 10 V to 20 V | — |
| Output Source Current | 130 mA typical | — |
| Output Sink Current | 270 mA typical | — |
| Propagation Delay | 680 ns typical | — |
| Время нарастания | 160 ns typical | — |
| Время спада | 60 ns typical | — |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V CMOS/LSTTL | 3.3 V / 5 V |
| Undervoltage Lockout | Yes (VCC UVLO) | — |
| Deadtime | Internally set | — |
| Cross-Conduction Prevention | Yes | — |
| Диапазон рабочих температур | -40 C to +125 C | -40C to +125C |
| Корпус | 8-pin SOIC | PG-DSO-8-69 (DSO-8 with exposed pad) |
| Статус RoHS | Compliant (PBF suffix indicates lead-free) | Compliant |
| Technology | — | High-Voltage Level Shift (SOI) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Bootstrap Voltage (Max) | — | 675 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Тип монтажа | — | Surface Mount |
| Уровень MSL | — | [DATA_NEEDED: MSL level] |