IRF3205STRLPBF vs IRL3705NPBF Сравнение
Подробное сравнение бок о бок IRF3205STRLPBF от Infineon и IRL3705NPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF3205STRLPBF | IRL3705NPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,02 | $0,92 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| Диапазон рабочих температур | -55 °C to +175 °C (Tj) | — |
| Корпус | TO-263-3 (D2PAK) | TO-220AB (3-pin through-hole) |
| Тип монтажа | Surface Mount | Through Hole |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | HEXFET (planar cell, fifth generation) |
| Packaging | Tape & Reel (STRL) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| Импульсный ток стока | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |
| Lead-Free (PBF suffix) | — | Yes |
| Статус RoHS | — | Compliant (per PBF suffix) |