IRF3205STRLPBF vs IRL3705NPBF 비교
다음의 상세 나란히 비교: IRF3205STRLPBF 제조: Infineon 및 IRL3705NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF3205STRLPBF | IRL3705NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.02 | $0.92 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| 동작 온도 범위 | -55 °C to +175 °C (Tj) | — |
| 패키지 | TO-263-3 (D2PAK) | TO-220AB (3-pin through-hole) |
| 실장 유형 | Surface Mount | Through Hole |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | HEXFET (planar cell, fifth generation) |
| Packaging | Tape & Reel (STRL) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| 펄스 드레인 전류 | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |
| Lead-Free (PBF suffix) | — | Yes |
| RoHS 상태 | — | Compliant (per PBF suffix) |