IRFB4310PBF vs IRF1310NSTRLPBF Сравнение
Подробное сравнение бок о бок IRFB4310PBF от Infineon и IRF1310NSTRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFB4310PBF | IRF1310NSTRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,95 | $0,84 |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 36 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | 170 nC | 73.3 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Диапазон рабочих температур | -55C to +175C (junction) | -55C to +175C |
| Корпус | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| Тип монтажа | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| Статус RoHS | Compliant | — |
| Lead-Free | Yes (Pb-free PBF suffix) | — |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |