IRFB4310PBF vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IRFB4310PBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4310PBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $0.84 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | β |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 36 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | 170 nC | 73.3 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C |
| Package | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| Mounting Type | Through Hole | Surface Mount |
| Avalanche Rated | Yes | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes (Pb-free PBF suffix) | β |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | β | 160 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Configuration | β | Single with built-in diode |