ISCH99N04NM7VATMA1 vs IQEH54NE2LM7UCGATMA1 Сравнение
Подробное сравнение бок о бок ISCH99N04NM7VATMA1 от Infineon и IQEH54NE2LM7UCGATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon
ISCH99N04NM7VATMA1 ✓ АктивенInfineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISCH99N04NM7VATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $1,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current at Ta (I_D) | 40 A | — |
| Pulsed Drain Current at Tc (I_DM) | 284 A | — |
| Power Dissipation at Ta (P_D) | 3 W | — |
| Power Dissipation at Tc (P_D) | 150 W | — |
| Gate Threshold Voltage (V_th) | Up to 3.2 V | — |
| Корпус | PG-TDSON-8 (TDSON-8 FL) | PG-TTFN-9-3 |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Technology | OptiMOS 7 Trench Power MOSFET | — |
| Operating Mode | Enhancement-mode | — |
| Target Application | 12 V to 48 V Motor Drives | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| Диапазон рабочих температур | — | -55C to +150C (typical MOSFET range) |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |