ISCH99N04NM7VATMA1 vs IQEH54NE2LM7UCGATMA1 Comparison

Detailed side-by-side comparison of ISCH99N04NM7VATMA1 by Infineon and IQEH54NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISCH99N04NM7VATMA1

ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon

ISCH99N04NM7VATMA1 βœ“ Active
Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active

Specification Comparison

Parameter ISCH99N04NM7VATMA1 IQEH54NE2LM7UCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.95
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 β€”
FET Type N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current at Ta (I_D) 40 A β€”
Pulsed Drain Current at Tc (I_DM) 284 A β€”
Power Dissipation at Ta (P_D) 3 W β€”
Power Dissipation at Tc (P_D) 150 W β€”
Gate Threshold Voltage (V_th) Up to 3.2 V β€”
Package PG-TDSON-8 (TDSON-8 FL) PG-TTFN-9-3
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Technology OptiMOS 7 Trench Power MOSFET β€”
Operating Mode Enhancement-mode β€”
Target Application 12 V to 48 V Motor Drives β€”
Product Family β€” OptiMOS 7 Power-Transistor
Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 25 V
Continuous Drain Current (ID) at Ta β€” 52 A
Continuous Drain Current (ID) at Tc β€” 406 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 150 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) at 10V VGS β€” [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical in nC]
Operating Temperature Range β€” -55C to +150C (typical MOSFET range)
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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