2EDL8123GXUMA1 - 120V Boot 3A/4A HS/LS Gate Driver | Infineon
Артикул: 2EDL8123GXUMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.96 | $0,96 |
| 10 | $0.86 | $8,60 |
| 100 | $0.78 | $78,00 |
| 500 | $0.72 | $360,00 |
| 1.000 | $0.65 | $650,00 |
| 3.000 | $0.58 | $1.740,00 |
2EDL8123GXUMA1 Обзор
A gate driver IC is an interface circuit that translates low-power control signals from a microcontroller, DSP, or PWM controller into the high-current drive voltages required to switch power transistors (MOSFETs, IGBTs, GaN HEMTs) on and off efficiently. Gate drivers sit hierarchically between the controller IC and the power stage, forming a critical part of the power conversion signal chain. Within power management, they belong to the power MOSFET driver subcategory alongside isolated gate drivers, low-side drivers, and high-side drivers. The 2EDL8123 belongs to Infineon's EiceDRIVER family of junction-isolated gate drivers, optimized for hard-switched and resonant topologies where compact size, high drive strength, and integrated bootstrap functionality are required.
Key features include 3 A typical source current (I_source) and 4 A typical sink current (I_sink) for fast switching transitions, 120 V maximum bootstrap voltage (V_BS) rating, integrated bootstrap diode, undervoltage lockout (UVLO) for both V_CC and V_BS rails, and TTL/CMOS-compatible logic inputs. The non-inverting input configuration simplifies direct microcontroller interfacing. The driver supports switching frequencies up to several hundred kHz depending on gate charge and operating conditions, making it suitable for high-density power converters.
The 2EDL8123 uses Infineon's junction-isolation (JI) technology to provide galvanic isolation between the low-voltage logic input and the high-voltage switching node. The integrated bootstrap diode eliminates an external component and reduces PCB footprint. Typical propagation delay is in the tens-of-nanoseconds range, enabling accurate PWM timing in synchronous rectification and motor drive applications.
Typical applications include synchronous buck and boost DC-DC converters, motor drive half-bridges for BLDC and PMSM motors, solar microinverters, industrial switched-mode power supplies (SMPS), and class-D audio amplifiers. The wide bootstrap voltage range also supports 100 V and 120 V bus systems. According to the manufacturer datasheet, the device is qualified for industrial operating temperatures from -40 C to +125 C.
When designing with this driver, select an external bootstrap capacitor based on the gate charge of the driven MOSFET and the switching frequency. A UVLO setting on the high-side supply prevents partial turn-on of the high-side switch during startup. Place the driver as close as possible to the driven MOSFETs to minimize parasitic gate-loop inductance.
This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select drop-in equivalents and optimize half-bridge layouts.
Аналоги без доработки для 2EDL8123GXUMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 2EDL8123GXUMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Input Type, Operating Temperature, Configuration, Isolation Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
2EDL8024GXUMA1
✅ Прямая замена✓ В наличии
$0.82 / шт.
Открыть даташит →2EDL8124GXUMA1
✅ Прямая замена✓ В наличии
$0.98 / шт.
Открыть даташит →2EDL8125GXUMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
2ED21834S06JXUMA1
✅ Прямая замена✓ В наличии
$0.89 / шт.
Открыть даташит →2ED2183S06FXUMA1
✅ Прямая замена✓ В наличии
$1.05 / шт.
Открыть даташит →2EDL8123GXUMA1 Максимальные параметры и электрические характеристики
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Input Type | Non-Inverting |
| Number of Drivers | 2 |
| Maximum Bootstrap Voltage (V_BS) | 120 V |
| Source Current (I_source, typical) | 3 A |
| Sink Current (I_sink, typical) | 4 A |
| UVLO Protection | Yes (V_CC and V_BS) |
| Bootstrap Diode | Integrated |
| Isolation Type | Junction-Isolated (JI) |
| Рабочая температура | -40 C to +125 C |
| Корпус | PG-VDSON-8-4 (VSON-8 with thermal pad) |
| Тип монтажа | Surface Mount |
| Logic Input Compatibility | TTL/CMOS |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов 2EDL8123GXUMA1
| Контакт 1 | HIN — High-side logic input (non-inverting, TTL/CMOS) |
| Контакт 2 | LIN — Low-side logic input (non-inverting, TTL/CMOS) |
| Контакт 3 | VCC — Low-side supply voltage (logic and low-side drive) |
| Контакт 4 | GND — Ground (logic and low-side drive return) |
| Контакт 5 | LO — Low-side gate drive output |
| Контакт 6 | VS — High-side floating supply return (switch node) |
| Контакт 7 | HO — High-side gate drive output |
| Контакт 8 | VB — High-side floating supply (bootstrap rail) |
| Контакт 9 | EP — Exposed thermal pad (connect to power ground) |
Типичное применение
2EDL8123GXUMA1 подходит для 6 применениеs: Synchronous Buck DC-DC Converters, BLDC / PMSM Motor Drive Half-Bridges, Class-D Audio Amplifiers, Solar Microinverters and Power Optimizers, Industrial Switched-Mode Power Supplies (SMPS), Half-Bridge Wireless Power Transmitters.
Synchronous Buck DC-DC Converters
The 2EDL8123GXUMA1 drives the high-side and low-side MOSFETs in synchronous buck converters used in 48 V telecom rails, 24 V industrial supplies, and 12 V point-of-load regulators. Its 3 A source current rapidly charges the high-side MOSFET gate during turn-on, while the 4 A sink current pulls the gate below the Miller plateau during turn-off, minimizing switching losses. The 120 V bootstrap rating comfortably covers 48 V input bus systems. The integrated bootstrap diode eliminates the external discrete component, reducing PCB area by 30-50% compared to discrete half-bridge designs. The driver's UVLO on V_BS prevents the high-side MOSFET from partially turning on at low input voltage, eliminating shoot-through. Place the VSON-8 driver within 5 mm of the driven MOSFETs to minimize gate-loop inductance.
Рекомендуется
BLDC / PMSM Motor Drive Half-Bridges
The 2EDL8123GXUMA1 is well suited for driving the three half-bridges of a BLDC or PMSM motor inverter in sub-100 V battery systems such as e-bikes, cordless power tools, drones, and small robotics. Each phase leg requires one half-bridge driver, so three drivers per motor. The driver's 3 A/4 A drive strength switches 40-80 V MOSFETs with Qg up to 50 nC at switching frequencies up to 100 kHz, supporting FOC (field-oriented control) PWM at 20-50 kHz. The integrated bootstrap diode simplifies the high-side bias supply for each phase. According to the Infineon datasheet, the 120 V V_BS rating provides sufficient margin over the battery bus under transient conditions including back-EMF during motor braking. Use a TVS diode on each phase output to absorb inductive kickback.
Рекомендуется
Class-D Audio Amplifiers
The 2EDL8123GXUMA1 drives the output half-bridge of class-D audio amplifiers in sub-100 V rail designs, supporting Bluetooth speakers, soundbars, and automotive infotainment systems. Its 3 A source / 4 A sink drive strength enables fast switching of the output MOSFETs at 250-500 kHz PWM, minimizing audio-band harmonic distortion. The junction-isolation barrier prevents high-side switching noise from coupling into the audio ground reference. According to the Infineon datasheet, the driver's propagation delay matching between high-side and low-side channels ensures tight dead-time control, critical for low-THD audio reproduction. The integrated bootstrap diode reduces BOM cost versus discrete bootstrap implementations. Use matched MOSFET pairs for best audio performance.
Рекомендуется
Solar Microinverters and Power Optimizers
The 2EDL8123GXUMA1 drives the primary-side half-bridge in solar microinverters and module-level power optimizers operating from 40 V to 100 V PV input. Its 120 V V_BS rating covers the maximum open-circuit PV voltage of a 60-cell panel (~75 V) plus safety margin. The 3 A source / 4 A sink drive strength enables zero-voltage-switching (ZVS) in resonant LLC or phase-shifted full-bridge topologies, improving efficiency to >97%. The integrated bootstrap diode reduces component count in the high-side bias supply, important for the compact form factor of module-mounted optimizers. Per the manufacturer datasheet, the driver's operating temperature range of -40 C to +125 C handles outdoor rooftop mounting.
Рекомендуется
Industrial Switched-Mode Power Supplies (SMPS)
The 2EDL8123GXUMA1 drives the primary-side or secondary-side half-bridge in industrial SMPS designs including 24 V DIN-rail power supplies, welding equipment, and motor-drive auxiliary rails. The driver's 3 A/4 A capability switches MOSFETs at 100-200 kHz, supporting compact magnetics in 100-500 W designs. The integrated bootstrap diode reduces PCB area, important for space-constrained DIN-rail housings. According to the Infineon datasheet, the wide V_BS margin (120 V vs 100 V max operating) provides reliability headroom for industrial environments with voltage transients on the DC bus. The driver's non-inverting inputs interface directly with industry-standard PFC + LLC combo controllers such as the ICE2PCS02GXUMA1.
Рекомендуется
Half-Bridge Wireless Power Transmitters
The 2EDL8123GXUMA1 drives the resonant half-bridge in wireless power transmitters operating at 100-200 kHz for 5 W to 15 W consumer charging applications and up to 50 W for industrial/kitchen applications. Its 3 A source / 4 A sink drive strength rapidly switches the L-C tank, minimizing switching losses during zero-voltage transitions. The 120 V bootstrap rating supports resonant link voltages up to 100 V in coil-driver designs. Per the Infineon datasheet, the tight propagation delay matching ensures accurate zero-voltage-switching timing, maximizing link efficiency. The integrated bootstrap diode reduces component count in the receiver-side inverter design.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 2EDL8123GXUMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 2EDL8024GXUMA1 | 2EDL8124GXUMA1 | 2EDL8125GXUMA1 | 2ED21834S06JXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-VDSON-8-4 (VSON-8) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Driver Configuration | Half-Bridge (HS + LS) | Half-Bridge (HS + LS) | Half-Bridge (HS + LS) | Half-Bridge (HS + LS) | Half-Bridge (HS + LS) | Half-Bridge (HS + LS) |
| Maximum V_BS | 120 V | 100 V | 120 V | 120 V | 600 V | 600 V |
| Source Current | 3 A | 2 A | 4 A | 4 A | 2.5 A | 2.5 A |
| Sink Current | 4 A | 2 A | 4 A | 4 A | 2.5 A | 2.5 A |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated | Integrated |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Voltage Class | 120 V (low-voltage) | 100 V (low-voltage) | 120 V (low-voltage) | 120 V (low-voltage) | 600 V (high-voltage) | 600 V (high-voltage) |
Ключевые отличия
- Higher source/sink drive current vs 2EDL8024 (против 2EDL8024GXUMA1)
- Higher V_BS rating than 2EDL8024 (против 2EDL8024GXUMA1)
- Stronger drive vs higher-voltage 2ED2183 family (против 2ED2183S06FXUMA1)
Заметки по проектированию
Estimated: Size the bootstrap capacitor (C_Boot) using the formula C_Boot > Q_g_total / Delta_V_BS, where Q_g_total is the total gate charge of the high-side MOSFET plus the driver's quiescent current integrated over the switching period, and Delta_V_BS is the allowed ripple on the bootstrap rail (typically 0.1-0.5 V). For a 30 nC Q_g MOSFET at 100 kHz with 0.2 V ripple, a 100 nF ceramic X7R capacitor suffices. Add a 1 uF bulk capacitor in parallel for sub-50 kHz operation to handle startup transients.
Place the 2EDL8123GXUMA1 within 5 mm of the driven MOSFETs to minimize parasitic gate-loop inductance. Use a 4-layer PCB with a continuous power-ground plane beneath the driver. Route the HO and LO gate-drive traces as 0.3-0.5 mm wide microstrip on the top layer, with no vias. Place a 100 nF ceramic bypass capacitor directly across VCC and GND pins (within 2 mm), plus a 10 uF bulk capacitor on the same node. Connect the exposed thermal pad to the power-ground plane via at least 9 thermal vias (0.3 mm diameter) for heat spreading.
Do not exceed the 120 V maximum bootstrap voltage rating under any operating condition - including transients from the high-side switching node overshoot. Add a snubber or TVS clamp across VS and VB if the high-side dV/dt exceeds 10 V/ns. Ensure the VCC supply ramps up cleanly during startup; if VCC rises before HIN/LIN signals are valid, the driver's output state is undefined. Per the Infineon datasheet, the UVLO thresholds are ~8 V (on) and ~7 V (off) on VCC, and ~7 V (on) on V_BS - design your bias supply above these with 0.5 V margin.
Estimated: The 2EDL8123GXUMA1's VSON-8 package has theta_JA of approximately 50 C/W on a standard 2-layer JEDEC test board (per Infineon package thermal data). At 100 kHz switching with a 30 nC Qg MOSFET and 12 V VCC, the driver dissipates roughly 0.5 W (P = VCC x Qg x f_sw), resulting in a junction temperature rise of 25 C above ambient. For higher-frequency or higher-VCC designs, calculate power dissipation using the Qg x VCC x f_sw formula and ensure the junction temperature stays below 125 C. Use the exposed thermal pad with adequate via stitching for best thermal performance.
Информация о соответствии
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial SMPS and motor drive applications. For automotive designs, consult Infineon automotive-grade gate drivers.
