EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron
Артикул: EDB1332BDBH-1DAUT-F-D ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $12.54 | $12,54 |
| 10 | $9.4 | $94,00 |
| 100 | $6.27 | $627,00 |
| 500 | $4.18 | $2.090,00 |
| 1.000 | $2.16 | $2.160,00 |
EDB1332BDBH-1DAUT-F-D Обзор
LPDDR2 SDRAM is a memory class derived from the DDR SDRAM family, optimized for mobile and embedded applications. As part of the DRAM -> SDRAM -> mobile memory hierarchy, LPDDR2 uses a parallel interface, low core voltage, and power-saving features such as partial-array self-refresh and deep power-down modes, making it a staple power-management-conscious choice for battery-operated and thermally constrained designs alongside application processors and SoCs.
Key features include the 1 Gbit density in a wide 32-bit bus organization, a 533 MHz clock rate delivering substantial bandwidth for mid-range embedded applications, and the compact 134-VFBGA (10x11.5 mm) footprint that conserves board area in stacked or densely routed PCBs. The -D suffix indicates dry-pack moisture-barrier packaging, supporting reflow soldering without unexpected moisture exposure.
Architecturally, the device operates at a 1.2V core supply, consistent with the JEDEC LPDDR2 (LPDDR2-S4) standard family, with the 32M x 32 organization allowing single-chip 32-bit memory buses or chip pairing for 64-bit buses common in automotive infotainment and telematics platforms.
Typical applications include automotive infotainment and cluster displays, telematics control units, embedded vision and camera systems, and industrial HMI platforms based on LPDDR2-capable SoCs such as i.MX 6 series processors.
Design consideration: LPDDR2 signal integrity demands controlled-impedance routing, length-matched address/command lines, and careful VDDQ decoupling; ball-map fanout should follow the datasheet BGA breakout guidance to minimize crosstalk on the CA bus.
This page synthesizes distributor pricing, stock availability, and drop-in family alternatives not consolidated in the manufacturer part-catalog page.
Аналоги без доработки для EDB1332BDBH-1DAUT-F-D — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с EDB1332BDBH-1DAUT-F-D (тот же форм-фактор и посадочное место) — отличается по Memory Type, Memory Size, Organization, Package, Technology.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
EDB1332BDBH-1DAUT-F
📋 Справочный аналог (нет в каталоге)
EDB1332BDBH-1DAAT-F-D
📋 Справочный аналог (нет в каталоге)
EDB1332BDBH-1DBAT-F-D
📋 Справочный аналог (нет в каталоге)
EDB1332BDBH-1DAUT-F-D Максимальные параметры и электрические характеристики
| Тип памяти | SDRAM - Mobile LPDDR2 |
| Размер памяти | 1 Gbit |
| Организация памяти | 32M x 32 |
| Интерфейс | Parallel |
| Clock Frequency | 533 MHz |
| Core Supply Voltage | 1.2 V |
| Supply Voltage Range | 1.14 V to 1.95 V |
| Access Mode | Single Bank Page Burst |
| Корпус | 134-VFBGA (10 x 11.5 mm) |
| Number of Terminals | 134 |
| Тип монтажа | Surface Mount |
| Temperature Grade | Automotive |
| Package Shape | Rectangular |
| Packaging Suffix | -D (Dry Pack) |
| Moisture Sensitivity | Dry Pack (per -D suffix) |
Руководство по цоколевке EDB1332BDBH-1DAUT-F-D в корпусе rectangular
Цоколевка для EDB1332BDBH-1DAUT-F-D (корпус rectangular). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для EDB1332BDBH-1DAUT-F-D.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
EDB1332BDBH-1DAUT-F-D подходит для 6 применениеs: Automotive Infotainment and Digital Cluster, Telematics Control Units (TCU), Embedded Vision and Camera Systems, Industrial HMI and Touch Panels, Portable and Battery-Powered Devices, Networking and Edge IoT Gateways.
Automotive Infotainment and Digital Cluster
The EDB1332BDBH-1DAUT-F-D fits automotive infotainment and digital cluster designs because its automotive temperature grade and 1 Gbit LPDDR2 density match the memory demands of head-unit SoCs and graphics pipelines. The 32M x 32 organization provides a wide 32-bit data bus, and the 533 MHz clock delivers the burst bandwidth needed for smooth UI rendering and media decode. In a typical design, the DRAM connects point-to-point to an LPDDR2-capable SoC with length-matched CA and DQ routing on inner layers referenced to solid planes. Unlike LPDDR3/4, LPDDR2 keeps controller requirements simple while the 1.2V core rail limits DRAM power draw, easing thermal design in sealed dashboards. The 134-VFBGA (10 x 11.5 mm) footprint also suits dense multi-board stacks behind the instrument cluster.
Рекомендуется
Telematics Control Units (TCU)
Telematics control units benefit from the EDB1332BDBH-1DAUT-F-D's combination of automotive temperature grade, low 1.2V power draw, and compact 134-ball VFBGA package. A TCU's modem-plus-processor stack buffers packet data and firmware images in DRAM; 1 Gbit in a 32M x 32 organization supplies sufficient working memory for LTE/NB-IoT modems and secure OTA update staging without forcing a larger, costlier memory. The 533 MHz clock sustains burst transfers during firmware downloads and log uploads. Because TCUs operate continuously even when the vehicle is parked, LPDDR2's self-refresh and deep power-down modes reduce standby current compared with higher-voltage DRAM alternatives. The -D dry-pack packing also supports the long storage intervals typical of automotive spare-part logistics before final assembly.
Рекомендуется
Embedded Vision and Camera Systems
Embedded vision platforms use the EDB1332BDBH-1DAUT-F-D to buffer image frames between sensors and ISP/SoC processing stages. The 1 Gbit capacity at 32M x 32 organization accommodates multiple buffered frames at VGA-to-FHD resolutions, while the 533 MHz parallel interface keeps up with streaming sensor data during burst writes. Frame buffering is latency-sensitive: DRAM write bandwidth directly determines maximum sustained frame rate, and the wide 32-bit LPDDR2 bus provides predictable throughput without the controller complexity of DDR3/4 designs. The low 1.2V supply helps meet thermal budgets in sealed camera modules, and the 10 x 11.5 mm VFBGA fits compact lens-board layouts. Pair with LPDDR2-capable vision SoCs and verify timing at the 533 MHz bin per the Micron datasheet.
Рекомендуется
Industrial HMI and Touch Panels
Industrial human-machine interface panels require memory that renders GUI layers reliably across wide temperature excursions; the EDB1332BDBH-1DAUT-F-D addresses this with its automotive-grade temperature rating and 1 Gbit LPDDR2 capacity. Frame buffers for WVGA-to-FHD displays, widget caching, and runtime graphics all fit within the 32M x 32 organization. The 533 MHz clock provides headroom for double-buffered rendering so touch response stays under perceptible-latency thresholds. The 1.2V rail reduces DRAM power in fanless panel PCs where every watt of dissipation matters, and the surface-mount 134-VFBGA withstands industrial vibration better than socketed alternatives. Layout should follow length-matched fly-by routing and solid plane references to preserve signal integrity at full clock speed across the extended temperature range.
Рекомендуется
Portable and Battery-Powered Devices
Battery-powered instrumentation and portable devices choose the EDB1332BDBH-1DAUT-F-D for its LPDDR2 power profile: a 1.2V nominal core supply within a 1.14V to 1.95V operating range minimizes DRAM energy per access, extending battery runtime versus legacy mobile DDR at higher voltages. The 1 Gbit density supports application working sets, data logging buffers, and wireless stacks in a single chip. During standby, LPDDR2 self-refresh and deep power-down modes cut leakage dramatically - essential for devices that sleep most of their life. The compact 134-ball VFBGA (10 x 11.5 mm) suits handheld PCB real estate, and the -D dry-pack delivery protects moisture-sensitive BGA packages through distribution channels common in lower-volume portable product builds.
Рекомендуется
Networking and Edge IoT Gateways
Edge IoT gateways and small networking appliances use the EDB1332BDBH-1DAUT-F-D as main memory for packet processing, protocol stacks, and local analytics. The 533 MHz LPDDR2 interface provides enough bandwidth for line-rate buffering on Fast Ethernet and sub-Gigabit links, while the 1 Gbit, 32M x 32 organization supports Linux-based edge runtimes comfortably. The automotive temperature grade gives margin for unventilated outdoor enclosures that exceed commercial ranges, and the 1.2V rail reduces total system power in passively cooled designs. The 134-VFBGA footprint integrates cleanly alongside SoC and flash on four-layer boards. Designers should verify the memory controller's LPDDR2-S4 support and 533 MHz timing closure per the Micron datasheet before layout release.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для EDB1332BDBH-1DAUT-F-D — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | EDB1332BDBH-1DAUT-F | EDB1332BDBH-1DAAT-F-D | EDB1332BDBH-1DBAT-F-D |
|---|---|---|---|---|
| Package | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10 x 11.5 mm) - same | 134-VFBGA (10 x 11.5 mm) - same | 134-VFBGA (10 x 11.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit |
| Organization | 32M x 32 | 32M x 32 | 32M x 32 | 32M x 32 |
| Core Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Packing | Dry Pack (-D) | Standard packing (no -D) | Dry Pack (-D) | Dry Pack (-D) |
Ключевые отличия
- Dry-pack moisture-barrier delivery (против EDB1332BDBH-1DAUT-F)
- Automotive temperature grade (против Commercial-grade LPDDR2 parts)
- Wide 32-bit bus in compact footprint (против x16 LPDDR2 alternatives)
Заметки по проектированию
At 533 MHz, LPDDR2 signal integrity is the dominant design risk. Route CA and DQ groups with matched intra-group skew, maintain 50-ohm single-ended impedance, and reference all memory traces to a continuous ground plane. Follow the ball-map escape fanout in the Micron datasheet so DQS strobes pair with their DQ bytes symmetrically. Avoid routing memory signals across plane splits; return-path discontinuities at 533 MHz cause eye collapse and controller calibration failures.
Power the EDB1332BDBH-1DAUT-F-D from a regulated 1.2V rail (operating window 1.14V to 1.95V per Microchip USA listing). Decouple VDD/VDDQ with a network of 10uF bulk plus multiple 0.1uF low-ESR ceramics placed at the VFBGA ball escapes. Follow Micron's recommended power-rail sequencing between VDD and VDDQ to avoid latch-up during startup. Estimated: even at moderate utilization, LPDDR2 core current is far below legacy mobile DDR thanks to the 1.2V rail, simplifying PMIC selection.
The -D suffix means dry-pack, moisture-sensitive BGA packaging: bake per the datasheet floor-life guidance if the moisture-barrier bag is opened and floor life is exceeded before reflow. Second, do not substitute an LPDDR2 device without verifying the JEDEC ball map against your SoC's supported memory list - different x32 LPDDR2 vendors can differ in CA mapping details. Finally, confirm controller support for the 533 MHz speed bin and program the correct timing registers during boot.
Информация о соответствии
Compliance declarations for the exact ordering code should be obtained from the official Micron part-detail page; the verified web data does not state RoHS/REACH status explicitly.
