IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
Артикул: IPD70N10S312ATMA2 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.69 | $690,00 |
IPD70N10S312ATMA2 Обзор
A power MOSFET is a voltage-controlled semiconductor switch used in switched-mode power supplies, motor drives, and load-management circuits. The N-channel enhancement-mode type is the most common building block because it offers lower on-resistance per unit silicon area than P-channel equivalents. MOSFETs sit inside the broader discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor device, and are essential building blocks of modern power-electronics systems spanning consumer, industrial, and automotive 12 V / 24 V / 48 V buses.
Key specifications include a 100 V VDS rating, 70 A continuous ID (Tc), 125 W power dissipation, and an ultra-low typical RDS(on) achieved through the OptiMOS-T cell design. The device is fully avalanche-rated and characterized for hard-switching topologies. Its low gate charge and figure-of-merit (FOM) reduce driver losses, making it well-suited to high-frequency SMPS stages where total switching loss directly limits converter efficiency.
Typical applications include DC-DC converters, synchronous rectification in SMPS, motor control H-bridges, battery protection and OR-ing switches, eFuse and hot-swap circuits, and load-switching in industrial automation. The 100 V rating provides ample margin for 24 V industrial bus rails and 48 V telecom/datacom point-of-load converters. The DPAK (TO-252) package enables compact PCB designs with a small footprint and a tab that doubles as the drain connection for low thermal resistance.
Design considerations when using this part include proper gate-drive voltage (10 V typical for full RDS(on) specification), adequate heatsinking or copper-pour area on the tab, and observance of the safe operating area (SOA) under pulse and DC conditions. The PG-TO252-3-11 footprint is industry-standard DPAK, which simplifies sourcing and board layout.
This page consolidates distributor pricing, drop-in alternatives, and practical design guidance beyond the manufacturer datasheet to support faster component selection and BOM decisions.
Аналоги без доработки для IPD70N10S312ATMA2 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPD70N10S312ATMA2 (тот же форм-фактор и посадочное место) — отличается по Technology, Package, MSL Level, Operating Temperature Range, Product Family.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPD70N10S312ATMA1
✅ Прямая замена✓ В наличии
$0.92 / шт.
Открыть даташит →IPD90N06S407ATMA2
✅ Прямая замена✓ В наличии
$0.84 / шт.
Открыть даташит →IPB020N10N5LFATMA1
✅ Прямая замена✓ В наличии
$2.62 / шт.
Открыть даташит →IPD33CN10NGATMA1
✅ Прямая замена✓ В наличии
$0.32 / шт.
Открыть даташит →BSC076N06NS3GATMA1
✅ Прямая замена✓ В наличии
$0.65 / шт.
Открыть даташит →BSZ110N08NS5ATMA1
✅ Прямая замена✓ В наличии
$0.4423 / шт.
Открыть даташит →IPD70N10S312ATMA2 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A |
| Power Dissipation (Ptot, Tc=25C) | 125 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Диапазон рабочих температур | -55C to +175C |
| Корпус | PG-TO252-3-11 (DPAK) |
| Тип монтажа | Surface Mount |
| Число выводов | 3 (Gate, Drain, Source) |
| Channel Type | N-Channel Enhancement Mode |
| Статус RoHS | Compliant |
| Уровень MSL | 1 (unlimited floor life) |
| Avalanche Rated | Yes |
Конфигурация выводов IPD70N10S312ATMA2
| Контакт 1 | Gate — Gate control input (drive with 10V typical) |
| Контакт 2 | Drain — Drain terminal (internally connected to the exposed tab) |
| Контакт 3 | Source — Source terminal (reference for gate drive) |
| Контакт Tab | Drain — Exposed metal tab electrically and thermally connected to drain |
Область безопасной работы (DC)
Типичное применение
IPD70N10S312ATMA2 подходит для 7 применениеs: 24V Industrial DC-DC Converters, Synchronous Rectification in SMPS, Motor Drive H-Bridge Switch, Battery Protection and OR-ing Switch, Hot-Swap and eFuse Circuits, LED Lighting Driver Output Stage, Telecom 48V Point-of-Load Conversion.
24V Industrial DC-DC Converters
The IPD70N10S312ATMA2 fits 24 V industrial DC-DC converters because its 100 V VDS rating provides 4x safety margin over a nominal 24 V bus, comfortably absorbing inductive transients from transformer leakage and load-step events. The 70 A continuous ID supports converter power levels up to approximately 1.5 kW at moderate duty cycles. In a typical forward or half-bridge topology, the device pairs with a dedicated gate driver such as the 1EDB7275FXUMA1 from Infineon. Its OptiMOS-T technology delivers low RDS(on) and low gate charge, minimizing conduction and switching losses. The DPAK tab dissipates heat efficiently when soldered to a copper pour, eliminating the need for an external heatsink in many designs.
Рекомендуется
Synchronous Rectification in SMPS
In synchronous rectification stages of 24 V-input SMPS, the IPD70N10S312ATMA2 replaces Schottky diodes to reduce conduction losses by approximately 50% at high current. Its low RDS(on) and OptiMOS-T cell design minimize both conduction and body-diode reverse-recovery losses, which directly improves overall converter efficiency at full load. The 100 V VDS rating handles the rectified bus voltage plus reflected transient overshoot from the transformer with comfortable margin. Designers should add a small dead-time in the controller firmware to prevent shoot-through and use a gate driver capable of sourcing/sinking 2 A for fast switching edges.
Рекомендуется
Motor Drive H-Bridge Switch
The IPD70N10S312ATMA2 serves as a low-side or high-side switch in 24 V brushed DC motor H-bridges driving pumps, fans, and small industrial actuators. Its 70 A continuous rating handles motor stall currents typical of fractional-horsepower DC motors, while the 100 V VDS rating absorbs inductive kickback from motor windings without avalanche breakdown. Pairing two IPD70N10S312ATMA2 low-side FETs with two P-channel high-side FETs (or a gate-driver bootstrap) creates a complete H-bridge. The DPAK tab enables direct PCB mounting with thermal vias to inner-layer copper pours for sustained current handling.
Рекомендуется
Battery Protection and OR-ing Switch
In battery management systems (BMS) and OR-ing switch circuits, the IPD70N10S312ATMA2 acts as a low-loss reverse-polarity and over-discharge disconnect switch. Its 100 V VDS rating accommodates 24 V or 48 V battery stacks with substantial transient margin, and its low RDS(on) minimizes voltage drop across the disconnect path. For lithium-ion battery packs the device prevents reverse-current flow during cell imbalance events. The DPAK footprint simplifies PCB layout and supports continuous high-current operation when mounted on adequate copper area. For multi-cell battery systems above 60 V, the higher VDS rating is essential.
Рекомендуется
Hot-Swap and eFuse Circuits
The IPD70N10S312ATMA2 works as the pass element in 24 V hot-swap and eFuse circuits, where it controls inrush current during board insertion into a live backplane. Its 70 A rating supports high-power server and telecom plug-in cards, and the 100 V VDS rating handles inductive transients from PCB parasitics during switching events. An SOA-aware hot-swap controller monitors drain current and gate voltage to keep the MOSFET within its safe operating area during the inrush phase. The OptiMOS-T linear-mode capability allows the device to dissipate inrush energy safely without triggering thermal shutdown when properly heatsinked.
Рекомендуется
LED Lighting Driver Output Stage
In high-brightness LED drivers operating from 24 V or 48 V bus rails, the IPD70N10S312ATMA2 functions as a constant-current linear regulator or buck-switch element. Its 100 V VDS rating tolerates input bus transients common in industrial and automotive LED lighting, while its low RDS(on) minimizes heat dissipation in the linear regulation path. For PWM-dimmed LED strings the device's fast switching capability preserves dimming ratio accuracy. The DPAK package's exposed tab provides direct thermal coupling to the PCB copper pour or an optional heatsink for high-current LED arrays requiring sustained thermal performance.
Рекомендуется
Telecom 48V Point-of-Load Conversion
In telecom 48 V input point-of-load converters delivering 12 V or lower to ASICs and FPGAs, the IPD70N10S312ATMA2 provides the high-side or low-side switch in isolated or non-isolated topologies. The 100 V VDS rating comfortably handles 48 V nominal bus with surge margin, and the 70 A continuous ID supports converter power levels up to approximately 700 W in continuous operation. The OptiMOS-T process delivers high efficiency at the switching frequencies (100-500 kHz) typical of telecom POL converters. The DPAK footprint allows direct replacement of competing 100 V N-channel MOSFETs in standardized reference designs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPD70N10S312ATMA2 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPD70N10S312ATMA1 | IPD90N06S407ATMA2 | IPB020N10N5LFATMA1 | IPD33CN10NGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 60 V | 100 V | 100 V |
| Technology | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS-5 | OptiMOS |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Industry-standard DPAK footprint with full drop-in compatibility (против IPD90N06S407ATMA2)
- Higher voltage rating in same DPAK package (против IPD33CN10NGATMA1)
- OptiMOS-T maturity and broad ecosystem (против IPB020N10N5LFATMA1 (OptiMOS-5))
Заметки по проектированию
The PG-TO252-3-11 (DPAK) package requires sufficient copper area on the drain tab to achieve rated 125 W power dissipation. Estimated: with a 1 square inch (645 mm^2) copper pour on a 1 oz copper layer, thermal resistance theta_JA is approximately 50 C/W, allowing about 2.5 W continuous dissipation at 25C ambient. For higher power, increase copper area to 4 square inches or add thermal vias to inner-layer copper planes. Without proper heatsinking, junction temperature can exceed 175C and trigger thermal shutdown or device failure.
Route the gate drive trace away from the drain switching node to minimize parasitic coupling. Keep the gate-source loop area as small as possible by placing the gate driver close to the MOSFET and using a tight gate-source resistor (10-100 ohm) network to suppress ringing. The exposed drain tab should be soldered to a copper pad of at least the same area as the package footprint, with thermal vias (typically 9-12 vias of 0.3 mm diameter) connecting to inner copper planes for heat spreading.
Do not exceed VGS of +/-20 V even momentarily - static discharge during handling can permanently damage the gate oxide. Always observe ESD precautions and use a gate-source resistor (10 kohm typical) when the gate is floating. For hard-switched topologies, add a snubber or gate-source resistor to dampen parasitic oscillations. Do not assume the SOA applies to pulsed operation without consulting the datasheet's pulsed-SOA curves. Inductive loads require a flyback or freewheeling diode to prevent avalanche breakdown at turn-off.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications refer to Infineon's automotive-grade OptiMOS-T portfolio. Lead-free reflow soldering compatible up to 260C peak.
