IPD90N10S406ATMA1 - 100V 90A N-Channel MOSFET | Infineon
Артикул: IPD90N10S406ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.52 | $15,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.96 | $480,00 |
| 1.000 | $0.84 | $840,00 |
| 2.500 | $0.72 | $1.800,00 |
IPD90N10S406ATMA1 Обзор
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. Within the broader semiconductor taxonomy it sits at the level of discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> trench MOSFET. The "normal level" gate drive (10 V Vgs) and 100 V rating place this part in the mid-voltage switching tier, well above small-signal MOSFETs but below the high-voltage superjunction class used in PFC stages.
Key differentiating specifications include an ultra-low typical on-resistance Rds(on) optimized for 10 V Vgs drive, 100% avalanche-tested ruggedness with a rated avalanche energy of 250 mJ, and an integrated body diode that simplifies half-bridge and synchronous-rectifier designs. The PG-TO252-3-313 DPAK package provides a low thermal-resistance path from the silicon die to the PCB drain tab, enabling high continuous current handling at moderate switching frequencies.
Architecturally, the part uses Infineon's planar-trench cell design to balance Rds(on) per area against gate charge Qg, minimizing conduction and switching losses simultaneously. The combination of low gate charge, low Rds(on), and 100 V BVDSS makes it a strong fit for 12 V and 24 V automotive / industrial rails where efficiency and thermal headroom dominate the design trade-off.
Typical applications include automotive 12 V and 24 V motor control (DC fans, pumps, EPS, seat adjusters), industrial relay and solenoid drivers, synchronous rectification in secondary-side SMPS, battery management system (BMS) protection switches, and DC-DC buck/boost converter high-side and low-side switches.
When designing in this part, pay attention to gate-drive voltage transients, PCB drain-tab copper area for heatsinking, and avalanche energy budgeting in inductive-load applications such as motor windings and solenoid valves.
This page synthesizes distributor pricing, drop-in alternatives drawn from same-brand and cross-brand sources, and practical design notes not found in the manufacturer datasheet alone - giving engineers a single decision-ready reference.
Аналоги без доработки для IPD90N10S406ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPD90N10S406ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Junction Temperature, Automotive Qualification, MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPD90N10S4-06
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPD50N06S409ATMA2
✅ Прямая замена✓ В наличии
$0.49 / шт.
Открыть даташит →IPD65R380E6ATMA1
✅ Прямая замена✓ В наличии
$0.65 / шт.
Открыть даташит →BSC076N04NDATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.82 / шт.
Открыть даташит →IAUC120N04S6N009ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.6 / шт.
Открыть даташит →IPD90N10S406ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 |
| Family / Series | OptiMOS |
| Тип транзистора | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A |
| Power Dissipation (Pd) @ Tc=25°C | 136 W |
| Gate Drive Level | Normal Level (10 V typical Vgs) |
| Avalanche Energy Rating (EAS) | 250 mJ |
| Рабочая температура перехода | -55 °C to +175 °C |
| Storage Temperature Range | -55 °C to +175 °C |
| Корпус / Типоразмер | PG-TO252-3-313 (DPAK) |
| Тип монтажа | Surface Mount |
| Количество выводов | 3 (Gate, Drain, Source) |
| Уровень MSL | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Green Product (RoHS compliant) |
| Built-in Body Diode | Yes (single with built-in diode) |
| Avalanche Tested | 100% Avalanche tested |
| Packaging | Tape & Reel (Cut Tape / Reel options available) |
Конфигурация выводов IPD90N10S406ATMA1
| Контакт 1 | Gate (G) — Gate control input; normal-level drive at 10 V Vgs for full enhancement |
| Контакт 2 | Drain (D) — Drain connection; also tied to the metal tab which serves as the primary thermal pad |
| Контакт 3 | Source (S) — Source connection; return path for gate drive and main current |
Типичное применение
IPD90N10S406ATMA1 подходит для 6 применениеs: Automotive 12V/24V DC Motor Drive, Automotive Relay and Solenoid Replacement, Synchronous Rectification in 12V/24V SMPS, Battery Management System (BMS) Protection Switch, Industrial 24V Load Switching and Hot-Swap, USB-PD and High-Current DC Power Distribution.
Automotive 12V/24V DC Motor Drive
The IPD90N10S406ATMA1 is purpose-built for 12 V and 24 V brushed DC motor drive stages in body and chassis electronics - including power windows, seat adjusters, sunroof actuators, electric fans, and windshield wipers. Its 100 V BVDSS provides a >4x safety margin above the 24 V rail plus inductive flyback transients from motor winding collapse, eliminating the avalanche stress that destroys lower-voltage parts. The 90 A continuous Id rating handles the inrush surge when a motor starts from standstill, while the 136 W power dissipation envelope and DPAK thermal pad sustain continuous torque output. AEC-Q101 qualification allows direct use in passenger vehicle ECUs without separate automotive stress screening.
Рекомендуется
Automotive Relay and Solenoid Replacement
Modern automotive designers replace electromechanical relays with the IPD90N10S406ATMA1 to gain silent switching, longer life (>1 billion cycles vs 100k for relays), and faster response. The part's 100 V Vdss easily switches 12 V solenoid coils and 24 V truck solenoids, while the 250 mJ avalanche rating absorbs the inductive kickback when the field collapses - eliminating the freewheeling diode in many circuits. PWM dimming of LED modules and proportional solenoid control benefit from the part's low Rds(on) and fast switching edge rates. AEC-Q101 qualification plus MSL1 reflow compatibility support high-volume SMT assembly lines.
Рекомендуется
Synchronous Rectification in 12V/24V SMPS
As a synchronous rectifier low-side switch in 12 V and 24 V buck converters, the IPD90N10S406ATMA1's low Rds(on) minimizes conduction loss and improves overall efficiency by 3-7% versus Schottky-diode rectification at full load. The integrated body diode handles dead-time conduction cleanly, while the 100 V rating accommodates transients on telecom-style 24 V or industrial 28 V buses. At switching frequencies up to 300 kHz the gate-charge losses remain acceptable; above that, designers should consider Infineon's higher-speed 80 V or 100 V OptiMOS parts with lower Qg.
Рекомендуется
Battery Management System (BMS) Protection Switch
In 12 V and 24 V lead-acid or Li-ion BMS modules, the IPD90N10S406ATMA1 acts as a low-side protection switch that disconnects the load during over-current, over-voltage, or short-circuit events. The 90 A Id rating supports peak inrush from inverter-driven motors, while the 100 V BVDSS provides headroom for 48 V mild-hybrid transients in next-generation systems. The 250 mJ avalanche rating absorbs the inductive energy stored in cabling inductance during abrupt turn-off - critical for ISO 7637-2 automotive transient immunity. AEC-Q101 qualification simplifies functional-safety documentation per ISO 26262.
Рекомендуется
Industrial 24V Load Switching and Hot-Swap
Industrial PLCs, factory-automation I/O modules, and 24 V solenoid / relay drivers use the IPD90N10S406ATMA1 for high-side or low-side load switching at currents up to 30 A continuous. Its 100 V rating handles the IEC 61131-2 24 V industrial bus with surge transients, while the DPAK package dissipates the I²R losses without an external heatsink in well-designed PCBs. The avalanche-tested ruggedness ensures survival of accidental short-circuit events common in field-wired industrial environments where inductive kickback from long cable runs can exceed 80 V.
Рекомендуется
USB-PD and High-Current DC Power Distribution
USB-PD 3.1 EPR systems delivering 28 V / 36 V / 48 V at 5 A use the IPD90N10S406ATMA1 as a load-switch or eFuse element on the source or sink side. The 100 V Vdss accommodates the highest EPR voltage levels with margin, while the 90 A rating covers 240 W continuous delivery in hub or docking-station designs. Its fast switching edge rates and avalanche ruggedness protect downstream USB-PD controllers from cable-disconnect inductive transients, while AEC-Q101 qualification future-proofs designs migrating to automotive USB-PD applications.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPD90N10S406ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPD90N10S4-06 | IPD50N06S409ATMA2 | IPD65R380E6ATMA1 | BSC076N04NDATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TDSON-8 (5x6 mm) - same exposed-pad SMD | PG-TDSON-8 (5x6 mm) - same exposed-pad SMD |
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Drain-Source Voltage (Vds) | 100 V | 100 V | 60 V (-40%) | 650 V (+550%) | 40 V (-60%) | 40 V (-60%) |
| Continuous Drain Current (Id @ Tc=25°C) | 90 A | 90 A | 50 A (-44%) | 10 A (-89%) | 100 A (+11%) | 120 A (+33%) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Green Product) | Yes | Yes | Yes | Yes | Yes |
Ключевые отличия
- Highest power dissipation in DPAK class at 136 W (против IPD50N06S409ATMA2)
- 100 V BVDSS provides 4x headroom over 24 V rails (против IPD50N06S409ATMA2)
- 250 mJ avalanche rating exceeds most 100 V class competitors (против BSC076N04NDATMA1)
Заметки по проектированию
The PG-TO252-3-313 DPAK package dissipates 136 W only at Tc=25 °C; in real PCB designs the case temperature rises with the drain tab's thermal path. Estimated: with a 150 mm² (1 sq inch) top-layer copper pad plus 6 thermal vias (0.3 mm) to an inner ground plane on a 4-layer FR-4 board, Rth(j-a) is roughly 35-40 °C/W. At 5 W dissipation the junction rises 175-200 °C above ambient - derate Id aggressively or add a small heatsink for sustained loads above 20 A. Always compute junction temperature using the datasheet's Rth(j-c) plus your measured Rth(c-a) before finalizing the layout.
Solder the drain tab directly to a continuous copper pour, not a fragmented pattern, to minimize thermal resistance and prevent solder-joint fatigue from thermal cycling. The gate and source traces should be routed as short as possible - place the gate-drive resistor within 5 mm of pin 1 to suppress parasitic turn-on from the Miller plateau. Add a 10 kΩ pull-down on the gate to keep the MOSFET off during MCU reset or power-up, and place a small RC snubber (10 Ω + 1 nF) across drain-source if switching >20 A in motor/relay circuits.
Do not exceed the avalanche energy rating of 250 mJ when switching inductive loads - measure the actual L*di²/dt energy during worst-case turn-off and compare to the datasheet's EAS curve at the operating junction temperature. Operating above EAS at high Tj causes cumulative degradation that fails in the field months later. Also avoid operating in linear region for extended periods; the part is optimized for fully-on (saturation) switching. For PWM dimming of LEDs or motor speed control, keep switching frequency below 25 kHz for audible-noise-sensitive applications.
Keep the high-current drain loop area minimal to limit stray inductance and switching-node ringing. Use a star-ground topology tying the source pin directly to the input-capacitor ground before the gate-driver ground return. Place a small ferrite bead or 1 Ω resistor in series with the gate to dampen high-frequency ringing when driving the gate through long PCB traces (>25 mm). For parallel-MOSFET configurations, use separate gate resistors for each device to prevent parasitic oscillation.
Информация о соответствии
Green Product (RoHS compliant) per Infineon datasheet. AEC-Q101 qualified for automotive applications (discrete-semiconductor equivalent of AEC-Q100). MSL1 rated for 260 °C peak reflow soldering. 100% avalanche tested at the factory.
