IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon
Артикул: IPG20N10S4L22AATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.18 | $21,80 |
| 100 | $1.85 | $185,00 |
| 500 | $1.62 | $810,00 |
| 1.000 | $1.45 | $1.450,00 |
IPG20N10S4L22AATMA1 Обзор
A dual MOSFET array integrates two independent N-channel transistors in one thermally-shared package, allowing engineers to build half-bridges, full-bridges, synchronous rectifiers, or bidirectional switches with fewer PCB traces and matched thermal behavior. In the broader taxonomy, this device sits within power MOSFETs -> MOSFET arrays -> discrete semiconductors. The dual-channel configuration reduces board area by approximately 40% versus two discrete single-channel MOSFETs while simplifying gate-drive routing.
Key features include 100 V V<sub>DS</sub> drain-source breakdown, 22 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level V<sub>GS(th)</sub> for direct microcontroller GPIO drive, low Q<sub>g</sub> for reduced switching losses, and wettable flank leads that enable automated optical inspection (AOI) of solder joints. The OptiMOS T2 trench technology delivers a strong figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for high-frequency switching.
Typical applications include automotive 12 V/24 V load switching, DC-DC converter synchronous rectification, motor drive half-bridges, solenoid/relay drivers, LED driver stages, and reverse-battery protection circuits. The 100 V rating provides ample headroom for 24 V automotive load-dump transients up to ~40 V.
When designing with this part, place both source pins on a continuous copper pour to maximize thermal spreading. Wettable flank terminals allow AOI inspection - critical for automotive PPAP/PSW deliverables. Confirm V<sub>GS</sub> drive voltage does not exceed the absolute maximum (typically ±20 V) and use a gate resistor to dampen parasitic ringing.
This page consolidates distributor pricing, drop-in alternatives, and application context that complement the manufacturer datasheet for faster engineering decisions.
Аналоги без доработки для IPG20N10S4L22AATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPG20N10S4L22AATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPB35N10S3L26ATMA1
✅ Прямая замена✓ В наличии
$1.15 / шт.
Открыть даташит →IPC50N04S5L5R5ATMA1
✅ Прямая замена✓ В наличии
$0.36 / шт.
Открыть даташит →IPC100N04S5L1R5ATMA1
✅ Прямая замена✓ В наличии
$1.18 / шт.
Открыть даташит →BSC076N04NDATMA1
✅ Прямая замена✓ В наличии
$0.82 / шт.
Открыть даташит →IPD50N06S409ATMA2
✅ Прямая замена✓ В наличии
$0.49 / шт.
Открыть даташит →BSC019N04LSTATMA1
✅ Прямая замена✓ В наличии
$1.21 / шт.
Открыть даташит →BSC019N08NS5ATMA1
✅ Прямая замена✓ В наличии
$1.78 / шт.
Открыть даташит →IAUCN08S7L033ATMA1
✅ Прямая замена✓ В наличии
$0.86 / шт.
Открыть даташит →IPG20N10S4L22AATMA1 Максимальные параметры и электрические характеристики
| FET Type | Dual N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | 20 A |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>) | 60 W |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V |
| Тип монтажа | Surface Mount |
| Корпус | PG-TDSON-8-10 (Wettable Flank) |
| Lead Configuration | Wettable Flank |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS T2 |
| Рабочая температура | -55°C to +175°C |
| Статус RoHS | Compliant |
| Channel Count | 2 (dual independent) |
Конфигурация выводов IPG20N10S4L22AATMA1
| Контакт 1 | G1 — Gate of MOSFET 1 |
| Контакт 2 | S1 — Source of MOSFET 1 |
| Контакт 3 | S1 — Source of MOSFET 1 |
| Контакт 4 | G2 — Gate of MOSFET 2 |
| Контакт 5 | S2 — Source of MOSFET 2 |
| Контакт 6 | S2 — Source of MOSFET 2 |
| Контакт 7 | D2 — Drain of MOSFET 2 |
| Контакт 8 | D1 — Drain of MOSFET 1 |
| Контакт 9 | D1 — Drain of MOSFET 1 (thermal pad connection) |
| Контакт 10 | D2 — Drain of MOSFET 2 (thermal pad connection) |
Область безопасной работы (SOA) - PG-TDSON-8-10 Dual Channel
Типичное применение
IPG20N10S4L22AATMA1 подходит для 6 применениеs: Automotive 12V/24V Load Switching, DC-DC Converter Synchronous Rectification, Motor Drive Half-Bridge, Reverse Battery Protection, LED Driver Stage, Solenoid and Relay Driver.
Automotive 12V/24V Load Switching
The IPG20N10S4L22AATMA1 is well suited for automotive 12 V and 24 V body-control load switching because its 100 V V<sub>DS</sub> rating provides more than 2x headroom over the worst-case load-dump transient (~40 V on a 24 V system). The dual-channel package allows one IC to drive two independent loads such as a headlamp relay and a heated-seat element, halving PCB area versus two discretes. The 22 mΩ R<sub>DS(on)</sub> keeps conduction loss under 2.5 W at 10 A continuous, which a properly sized copper pour dissipates without exceeding the 175 °C junction limit. AEC-Q101 qualification means this part passes automotive PPAP for body and chassis ECUs. Engineers should place both source pads on a continuous ground pour and add a TVS clamp at the drain for additional transient protection.
Рекомендуется
DC-DC Converter Synchronous Rectification
For 24 V-to-12 V or 12 V-to-5 V buck converter synchronous rectification, the IPG20N10S4L22AATMA1 delivers both high-side and low-side switches in a single PG-TDSON-8-10 package with matched thermal paths. Its 22 mΩ R<sub>DS(on)</sub> and low Q<sub>g</sub> (OptiMOS T2 trench technology) minimize conduction and switching losses, achieving peak efficiencies above 95% at moderate frequencies. The 100 V V<sub>DS</sub> rating allows 36 V input operation with full margin. The dual-die package also halves gate-driver propagation delay mismatch between the two channels, reducing dead-time loss and body-diode conduction. For multi-kilowatt converters, parallel multiple parts - but a single IPG20N10S4L22AATMA1 handles up to about 300 W continuous in a 24 V-to-12 V topology at 250 kHz switching.
Рекомендуется
Motor Drive Half-Bridge
The IPG20N10S4L22AATMA1 provides both high-side and low-side switches of a half-bridge in one thermally-coupled package, ideal for driving small DC brushless motors up to 20 A peak in automotive HVAC blowers, water pumps, and seat fans. The matched thermal mass of the two dice keeps junction temperatures balanced during hard switching, extending reliability versus discrete pairs. Logic-level V<sub>GS(th)</sub> allows direct drive from 3.3 V microcontrollers through a small gate-driver IC. The wettable flank leads satisfy automotive AOI solder-inspection requirements for safety-critical motor-control modules. Designers should add 100 ns dead-time in firmware and a bootstrap capacitor for the high-side gate drive supply.
Рекомендуется
Reverse Battery Protection
The IPG20N10S4L22AATMA1 is an excellent choice for reverse-battery protection in 12 V and 24 V automotive ECUs. The dual N-channel configuration allows one channel as a high-side disconnect switch and the second as a low-side return-path bypass, while the 100 V V<sub>DS</sub> rating tolerates inductive transients when disconnecting live loads. With 22 mΩ R<sub>DS(on)</sub>, the steady-state voltage drop at 10 A is only 220 mV - far lower than Schottky-diode solutions that would dissipate 6 W. Logic-level gate drive enables direct control from an MCU supervising the polarity detection circuit. AEC-Q101 qualification and wettable flanks support automotive PPAP requirements. Engineers should add a gate-source Zener clamp to prevent V<sub>GS</sub> overstress during supply reversal events.
Рекомендуется
LED Driver Stage
In automotive LED headlamp and daytime-running-light drivers, the IPG20N10S4L22AATMA1 operates as a high-frequency PWM dimming switch with the dual-channel configuration supporting both main and daytime-running-light outputs from one IC. The 22 mΩ R<sub>DS(on)</sub> minimizes thermal dissipation during continuous conduction, while the logic-level gate drive allows direct PWM input from an LED-driver controller running at up to 1 kHz without requiring a dedicated gate-driver stage. The 100 V V<sub>DS</sub> rating protects against open-load and inductive kickback events. AEC-Q101 qualification is mandatory for exterior lighting modules. Place the IC adjacent to the LED string with a wide copper pour to keep junction temperature rise under 50 °C at full load.
Рекомендуется
Solenoid and Relay Driver
For automotive solenoid and relay driver modules in transmission, emissions, and chassis-control subsystems, the IPG20N10S4L22AATMA1 minimizes drive-circuit footprint by combining two switches in one PG-TDSON-8-10 package. The 20 A continuous drain current covers most 12 V solenoid coils directly, while the 100 V V<sub>DS</sub> rating withstands the inductive flyback that occurs when the coil is de-energized - especially important for transmission shift solenoids that see high dI/dt. Logic-level gate drive allows direct connection to ECU GPIO pins through a small gate resistor. AEC-Q101 and wettable flank qualification are required for under-hood applications. Always add a flyback diode or active clamp across the solenoid coil to further reduce switching stress.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPG20N10S4L22AATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPB35N10S3L26ATMA1 | IPC50N04S5L5R5ATMA1 | IPC100N04S5L1R5ATMA1 | BSC076N04NDATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-10 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| V<sub>DS</sub> (Drain-Source Voltage) | 100 V | 100 V - same | 40 V | 40 V | 40 V | 80 V |
| R<sub>DS(on)</sub> (typical) | 22 mΩ | ~26 mΩ | 5.5 mΩ | 1.5 mΩ | 7.6 mΩ | 1.9 mΩ |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | 35 A | 50 A | 100 A | 76 A | 100 A |
| Technology | OptiMOS T2 | OptiMOS | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 |
| AEC-Q101 Qualification | Yes | Yes | Yes | Yes | Yes | Yes |
| Wettable Flank Leads | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1) | ~$2.45 | ~$1.85 | ~$2.10 | ~$2.60 | ~$1.40 | ~$1.95 |
Ключевые отличия
- Dual N-channel in one package with matched thermal mass (против Discrete single-channel MOSFETs)
- 100 V V<sub>DS</sub> with 22 mΩ R<sub>DS(on)</sub> - ideal 24 V automotive balance (против 40 V OptiMOS 5 family (IPC100N04S5L1R5ATMA1))
- Wettable flank leads for automated optical inspection (против Standard non-wettable PG-TDSON packages)
Заметки по проектированию
Estimated: At VIN=24 V, VOUT=12 V, and 10 A continuous load per channel, the IPG20N10S4L22AATMA1 dissipates P = I² × R = 10² × 0.022 = 2.2 W per channel, totaling ~4.4 W. With a properly designed 4-layer PCB copper pour (theta_JA ~30 °C/W), the junction temperature rises ~132 °C above 25 °C ambient - close to the 175 °C absolute maximum. For sustained 10 A loads, add a top-side thermal pad connected to at least 1 square inch of copper, or reduce switching frequency to keep average dissipation manageable. For 20 A continuous per channel, an external heatsink or larger copper area is mandatory.
Place both source pins (S1 at pins 2-3 and S2 at pins 5-6) on a continuous ground-plane pour to minimize source inductance and prevent gate-drive ringing. The exposed drain thermal pad (pins 9-10) must be soldered to a PCB thermal land with multiple thermal vias to inner copper layers. Use 100 nF X7R ceramic bypass capacitors within 5 mm of each V<sub>DD</sub> pin for the gate driver. Keep high-current drain traces short and wide (at least 0.5 mm per ampere) to reduce trace resistance and inductance.
Do not exceed V<sub>GS</sub> = ±20 V absolute maximum - the IPG20N10S4L22AATMA1 uses logic-level gate drive but a 12 V gate-source Zener clamp is recommended for protection against supply transients. Always include a gate resistor (10-100 Ω) to dampen parasitic ringing between the gate-source capacitance and gate-drive inductance. For half-bridge applications, ensure dead-time insertion (typically 100-200 ns) to prevent shoot-through during MOSFET turn-on/turn-off transitions.
For half-bridge and synchronous-rectifier layouts, keep the high-side drain and low-side source loop area as small as possible to minimize parasitic inductance and switching-node ringing. Place the bootstrap diode and capacitor (for high-side gate drive) within 3 mm of the BS pin. Separate power ground (drain-source return) from signal ground (gate-drive return) and connect them at a single point near the controller. Use a star-ground or split-plane layout to prevent high di/dt currents from coupling into the gate-drive loop.
Информация о соответствии
AEC-Q101 qualified per Infineon. Wettable flank leads support automotive PPAP. RoHS and REACH compliant per Arrow.com and DigiKey listings.
