BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
Артикул: BSC019N08NS5ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.28 | $3,28 |
| 10 | $2.95 | $29,50 |
| 100 | $2.61 | $261,00 |
| 500 | $2.32 | $1.160,00 |
| 1.000 | $2.05 | $2.050,00 |
| 5.000 | $1.78 | $8.900,00 |
BSC019N08NS5ATMA1 Обзор
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between its drain and source terminals. The BSC019N08NS5ATMA1 belongs to the OptiMOS 5 family, which is Infineon's fifth-generation optimized trench MOSFET platform targeting 40 V to 300 V rails. The technology hierarchy is: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component. OptiMOS 5 specifically reduces figure-of-merit (RDS(on) x Qg) by roughly 30 percent versus the prior OptiMOS 3 generation, allowing either higher efficiency at the same footprint or higher current at the same RDS(on).
The device features 80 V VDS max, 1.9 mOhm RDS(on) max at VGS = 10 V, an avalanche-rated single-pulse body diode, and is qualified to JEDEC JESD22 standards for moisture sensitivity and thermal cycling. The SuperSO8 5x6 outline provides a low thermal resistance path to PCB copper, and the exposed drain pad enables direct heat extraction into inner copper planes or an external heat spreader. This combination of low RDS(on), small package, and high pulsed current capability is the defining advantage of the part.
Architecturally, the device is a single N-channel enhancement-mode cell array, gate-source threshold typically in the 2.5 V to 3.8 V range to support standard logic-level and 5 V microcontrollers, with on-resistance specified at 10 V VGS for full enhancement. The OptiMOS 5 trench cell delivers low gate charge Qg, which reduces switching losses at high frequency and makes the part especially well-matched to hard-switched buck and synchronous rectifier positions. Total gate charge is a key figure of merit for MHz-frequency DC-DC converters in telecom and server power rails.
Typical applications include synchronous rectification in 48 V to 12 V bus converters, hot-swap and OR-ing controllers in telecom and datacom shelves, motor drive half-bridges in industrial 24 V to 48 V systems, and high-current battery protection in e-mobility and energy storage. The 80 V drain rating provides comfortable headroom over standard 48 V nominal buses that may see transients above 60 V during load steps or input surges. The combination of small footprint, high current, and low conduction loss is what differentiates this part.
When designing in the BSC019N08NS5ATMA1, pay close attention to PCB layout: the exposed pad is the primary thermal and electrical drain path and must be soldered to a copper plane with multiple thermal vias. Gate drive should be a 10 V source capable of 1 A peak to achieve the specified switching speed; a series gate resistor of 10 to 47 ohm typically damps ringing. Compare every spec against your worst-case SOA, including DC and pulsed conditions, before finalizing the design.
This page synthesizes distributor stock, pricing, and 80 V/100 V-class drop-in SuperSO8 alternatives that complement the BSC019N08NS5ATMA1, plus practical PCB and thermal design notes not found in the manufacturer datasheet itself.
Аналоги без доработки для BSC019N08NS5ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSC019N08NS5ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Series.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC0901NSIATMA1
✅ Прямая замена✓ В наличии
$0.38 / шт.
Открыть даташит →BSC014NE2LSIATMA1
✅ Прямая замена✓ В наличии
$0.48 / шт.
Открыть даташит →BSZ0901NSIATMA1
✅ Прямая замена✓ В наличии
$0.34 / шт.
Открыть даташит →BSZ0501NSIATMA1
✅ Прямая замена✓ В наличии
$0.29 / шт.
Открыть даташит →BSC0502NSIATMA1
✅ Прямая замена✓ В наличии
$0.85 / шт.
Открыть даташит →BSC019N08NS5ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) max | 80 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID) at TA=25C | 28 A |
| Continuous Drain Current (ID) at TC=25C | 237 A |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | 3.0 V |
| Power Dissipation (TA=25C) | 3 W |
| Power Dissipation (TC=25C) | 214 W |
| Диапазон рабочих температур | -55 C to +150 C |
| Корпус | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount |
| Уровень MSL | 1 |
| Статус RoHS | Compliant |
| Avalanche Rated | Yes |
Конфигурация выводов BSC019N08NS5ATMA1
| Контакт 1 | G — Gate |
| Контакт 2 | S — Source |
| Контакт 3 | S — Source |
| Контакт 4 | S — Source (NC tab in some datasheet revisions) |
| Контакт 5 | S — Source |
| Контакт 6 | S — Source |
| Контакт 7 | S — Source |
| Контакт 8 | S — Source |
| Контакт EP | D — Drain (exposed pad, primary thermal and electrical connection) |
Область безопасной работы (DC, TC=25C)
Типичное применение
BSC019N08NS5ATMA1 подходит для 6 применениеs: 48 V to Point-of-Load Synchronous Rectifier, Hot-Swap and OR-ing Controller in Telecom Shelves, Industrial 24 V to 48 V Motor Drive Half-Bridge, e-Mobility and Battery Protection Switch, Solar Inverter Boost Stage Switch, Server and Datacenter 12 V Hot-Swap Switch.
48 V to Point-of-Load Synchronous Rectifier
The BSC019N08NS5ATMA1 is well-suited for the low-side synchronous rectifier position in 48 V-to-low-voltage buck converters commonly used in telecom and datacom shelves. With 1.9 mOhm RDS(on) at 10 V VGS and 80 V drain-source rating, it carries 50 A continuous with conduction loss under 5 W per device, while the OptiMOS 5 trench cell keeps switching loss low at 200 kHz to 500 kHz switching frequency. Placed adjacent to the high-side MOSFET with minimized source-loop inductance, it forms a compact half-bridge that drops into standard SuperSO8 PCB footprints.
Рекомендуется
Hot-Swap and OR-ing Controller in Telecom Shelves
In 48 V telecom and datacom hot-swap and OR-ing applications, the BSC019N08NS5ATMA1 acts as the main pass MOSFET that connects a -48 V or +48 V bus to the load. The 80 V breakdown withstands the worst-case transient on a properly clamped -48 V bus, while 1.9 mOhm RDS(on) keeps load-step dissipation under 2 W at 30 A continuous. Its 28 A TA-rated current handles sustained inrush of typical line-card loads, and the SuperSO8 footprint allows direct mounting to the PCB copper bus bar for heat extraction.
Рекомендуется
Industrial 24 V to 48 V Motor Drive Half-Bridge
For 24 V and 48 V industrial motor drives such as robotics arms, AGVs, and servo position controllers, the BSC019N08NS5ATMA1 is used as the low-side switch in a 3-phase half-bridge driven by a gate driver IC like the 2ED21844S06JXUMA1. The 80 V rating gives 30 V to 60 V of margin above nominal 48 V, comfortably absorbing back-EMF spikes during PWM commutation. The low 1.9 mOhm RDS(on) keeps I^2R losses low at 20 A to 40 A peak motor current, while the exposed-pad SuperSO8 dissipates heat directly into the inner PCB copper.
Рекомендуется
e-Mobility and Battery Protection Switch
In 48 V mild-hybrid e-mobility and lithium battery storage systems, the BSC019N08NS5ATMA1 serves as the main battery disconnect or pre-charge MOSFET. The 80 V VDS rating supports 48 V nominal packs with headroom for inductive transients during contactor switching, and the 1.9 mOhm RDS(on) minimizes voltage drop and heat during 100 A+ inrush. Multiple devices can be paralleled on a common heatsink for higher current; the SuperSO8 footprint keeps the total solution size small for underhood or pack-integrated battery management units.
Рекомендуется
Solar Inverter Boost Stage Switch
For residential and commercial solar micro-inverters and DC optimizers operating from 40 V to 60 V input, the BSC019N08NS5ATMA1 functions as the boost switch or synchronous rectifier MOSFET. The 80 V drain-source breakdown tolerates open-circuit transients at 60 V Voc panels, while 1.9 mOhm RDS(on) achieves greater than 98 percent efficiency at 20 A continuous. Its OptiMOS 5 cell structure handles 100 kHz to 200 kHz switching frequencies typically used in solar boost stages without thermal runaway.
Рекомендуется
Server and Datacenter 12 V Hot-Swap Switch
The BSC019N08NS5ATMA1 works as the main 12 V hot-swap pass MOSFET in server, storage, and networking line cards where 80 V breakdown is over-specified but provides ultra-low conduction loss at 30 A to 50 A load. Its 1.9 mOhm RDS(on) keeps the steady-state voltage drop under 100 mV at full load, allowing downstream regulators to operate closer to their minimum input voltage. The device's SuperSO8 footprint is compatible with industry-standard hot-swap controller layouts used in enterprise server designs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSC019N08NS5ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC0901NSIATMA1 | BSC014NE2LSIATMA1 | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 | BSC0502NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same |
| VDS max (V) | 80 | 80 | 25 | 30 | 30 | 60 |
| RDS(on) max at VGS=10V (mOhm) | 1.9 | 9.0 | 1.4 | 9.0 | 5.0 | 5.0 |
| Continuous ID at TC=25C (A) | 237 | 50 (approx) | 300 (approx) | 40 (approx) | 60 (approx) | 100 (approx) |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
Ключевые отличия
- Industry-leading 1.9 mOhm RDS(on) in SuperSO8 5x6 for 80 V class (против BSC0901NSIATMA1)
- Higher 80 V breakdown than 60 V or 30 V class SuperSO8 alternatives (против BSC0502NSIATMA1)
- OptiMOS 5 trench technology with lower figure-of-merit than prior OptiMOS generations (против BSC014NE2LSIATMA1)
Заметки по проектированию
Estimated: At 50 A continuous through the BSC019N08NS5ATMA1 at 25 C ambient with RDS(on) = 1.9 mOhm, conduction loss is approximately 4.75 W. With a SuperSO8 theta_JA of approximately 50 C/W on a 1 oz 6 cm^2 copper plane, junction temperature rises 237 C above ambient, which is unsustainable. A 4-layer board with an internal 2 oz copper plane directly under the exposed pad and an array of 0.3 mm thermal vias drops theta_JA to roughly 35 C/W, keeping the junction below 175 C with a 25 C ambient. At 30 A or below, the part runs comfortably on standard 2-layer FR4.
The exposed pad is the primary drain electrical and thermal path and must be soldered to a copper pour with at least 0.3 mm thermal vias in a 3x3 array on 1.0 mm pitch. Source pins 2, 3, 5, 6, 7, and 8 should be tied to a common ground copper pour on the top layer to minimize source inductance. Place the gate drive loop (gate resistor + driver output) directly over the gate pin to keep the gate-drive loop area under 0.5 cm^2; this reduces ringing and EMI at the switching node.
Do not operate the BSC019N08NS5ATMA1 with VGS below 10 V in the high-current path - at 4.5 V VGS the on-resistance is roughly 2x to 3x higher, multiplying conduction loss and risking thermal runaway. Always include a TVS clamp or snubber across drain-source when the load is inductive (motors, solenoids) to keep VDS transients below 80 V. Finally, avoid paralleling devices without individual gate resistors; otherwise gate-oscillation between mismatched devices can cause shoot-through and catastrophic failure.
Информация о соответствии
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose AEC-Q100-qualified parts from the Infineon automotive catalog for automotive designs.
