IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
Артикул: IPTG025N15NM6ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.42 | $3,42 |
| 10 | $2.89 | $28,90 |
| 100 | $2.31 | $231,00 |
| 500 | $1.85 | $925,00 |
| 1.000 | $1.52 | $1.520,00 |
IPTG025N15NM6ATMA1 Обзор
What is a power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled three-terminal switch used for power conversion. The N-channel variant conducts when a positive gate-source voltage is applied, and the 150 V class sits in a hypernym hierarchy of low-voltage MOSFET (<60 V) -> standard-voltage MOSFET (60-200 V) -> high-voltage MOSFET (>500 V) -> power discrete semiconductor. Within Infineon's portfolio, this part belongs to the OptiMOS 6 family, which is optimized for telecom, server, solar, and e-mobility applications.
Key features include 2.5 mOhm typical on-state resistance (RDS(on)) at 10 V VGS, a low gate charge Qg that lowers switching losses, and a monolithically integrated Schottky-like diode body for reduced reverse-recovery charge. The PG-HSOG-8-1 package delivers a thermal resistance (junction-to-case) suitable for 395 W power dissipation at TC = 25 C, enabling compact SMD designs that previously required D2PAK footprints.
Technical depth: the OptiMOS 6 150 V process uses Infineon's latest trench MOSFET cell architecture with an optimized source-body epitaxy. Compared to OptiMOS 5, this part offers improved figure-of-merit (RDS(on) x Qg) of roughly 30 percent, translating directly into lower conduction and switching losses. The PG-HSOG-8-1 (TOLG) package supports reflow soldering with MSL1 floor life and provides a Kelvin-source connection on pin 4 for gate-drive optimization.
Typical applications include 48 V telecom bus converters, synchronous rectification in telecom rectifiers, solar string inverters, e-bike and low-voltage e-mobility motor drives, hot-swap controllers in server 48 V rails, and industrial SMPS half-bridge stages. The 150 V rating provides sufficient margin for 48 V nominal bus systems with transients up to 100 V.
Design consideration: ensure the gate-drive voltage reaches at least 10 V for full RDS(on) specification; driving below 6 V can double on-state losses. The exposed pad must be soldered to a copper area of at least 6 cm squared on the drain tab for the rated 395 W dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для IPTG025N15NM6ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPTG025N15NM6ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPTG020N15NM6ATMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IPT067N20NM6ATMA1
✅ Прямая замена✓ В наличии
$4.85 / шт.
Открыть даташит →ISC016N08NM8ATMA1
✅ Прямая замена✓ В наличии
$1.02 / шт.
Открыть даташит →IAUCN08S7N024ATMA1
✅ Прямая замена✓ В наличии
$0.89 / шт.
Открыть даташит →IAUC100N04S6N028ATMA1
✅ Прямая замена✓ В наличии
$0.42 / шт.
Открыть даташит →IPTG025N15NM6ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TA=25C | 26 A |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Power Dissipation (PD) at TC=25C | 395 W |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V |
| Корпус | PG-HSOG-8-1 (TOLG) |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | -55 C to +175 C (typical for OptiMOS 6) |
| Статус RoHS | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK |
Конфигурация выводов IPTG025N15NM6ATMA1
| Контакт 1 | Drain — Drain terminal and thermal pad (exposed pad) |
| Контакт 2 | Source — Source terminal |
| Контакт 3 | Source — Source terminal |
| Контакт 4 | Kelvin Source — Kelvin source connection for gate drive return |
| Контакт 5 | Gate — Gate terminal |
| Контакт 6 | Source — Source terminal |
| Контакт 7 | Source — Source terminal |
| Контакт 8 | Source — Source terminal |
Область безопасной работы (DC) - PG-HSOG-8-1 package, TC=25C
Типичное применение
IPTG025N15NM6ATMA1 подходит для 6 применениеs: 48 V Telecom Bus Converters, Synchronous Rectification in SMPS, Solar String Inverters, E-Bike and Low-Voltage E-Mobility Motor Drives, Server 48 V Hot-Swap Controllers, Industrial SMPS Half-Bridge Stages.
48 V Telecom Bus Converters
The IPTG025N15NM6ATMA1's 150 V VDS rating provides ample margin for 48 V nominal telecom buses with transients up to 100 V. With 2.5 mOhm RDS(on) at VGS=10 V and the PG-HSOG-8-1 footprint, it fits high-density half-bridge and full-bridge converter stages. The 26 A continuous ID supports typical 600-1200 W converter modules. Designers should use the Kelvin-source pin to minimize gate-loop inductance, and gate-drive voltage must reach at least 10 V for the rated RDS(on). Compared to a 100 V MOSFET on the same bus, the 150 V part avoids avalanche stress during hot-swap events.
Рекомендуется
Synchronous Rectification in SMPS
In 48 V to 12 V or 24 V bus converters, the IPTG025N15NM6ATMA1 serves as the synchronous rectifier on the secondary side, replacing Schottky diodes to cut conduction losses. Its 2.5 mOhm RDS(on) and low Qrr body-diode performance yield rectifier efficiency above 98 percent in 1 kW converters. The PG-HSOG-8-1 package's small footprint (30 percent smaller than D2PAK) enables higher power density. Drive the gate with 10 V from a synchronous rectifier controller such as the IR1161 family, with dead-time control to prevent cross-conduction.
Рекомендуется
Solar String Inverters
Solar string inverters operate from 80-150 V open-circuit panels and require MOSFETs that handle both boost and full-bridge topologies. The IPTG025N15NM6ATMA1's 150 V rating covers the MPPT range of typical 60-cell panels, while its 26 A continuous current handles 3-4 kW inverter stages. The OptiMOS 6 technology reduces switching losses by approximately 30 percent versus prior generations, improving inverter CEC efficiency. Use a high-side bootstrap driver and ensure the exposed drain pad has at least 6 cm squared of copper for thermal dissipation under sustained load.
Рекомендуется
E-Bike and Low-Voltage E-Mobility Motor Drives
E-bike controllers operate from 36-48 V battery packs with peak currents up to 30 A, and the IPTG025N15NM6ATMA1 handles these transients within its SOA. The 150 V VDS rating provides safety margin for regenerative braking events where back-EMF can briefly exceed bus voltage. Its PG-HSOG-8-1 footprint fits compact controller enclosures, and the Kelvin-source pin enables the clean gate signals required at 25-50 kHz PWM frequencies. Pair with a 3-phase gate driver such as the IRS21834STRPBF or 6EDL04N02PRXUMA1 for complete motor-drive solutions.
Рекомендуется
Server 48 V Hot-Swap Controllers
In server 48 V intermediate bus architectures, the IPTG025N15NM6ATMA1 functions as the hot-swap switch protecting downstream hardware from inrush transients. Its 264 A pulsed current rating handles the initial capacitor charging surge, while the 150 V VDS accommodates transient spikes during hot-plug events. The 2.5 mOhm RDS(on) keeps steady-state conduction loss minimal across the bus. Integrate with a hot-swap controller such as the ADM1177 or LTC4282 for closed-loop current limiting, and use a dedicated gate driver to control turn-on dV/dt.
Рекомендуется
Industrial SMPS Half-Bridge Stages
Industrial SMPS designs at the 100-150 V bus class use the IPTG025N15NM6ATMA1 as the half-bridge switch pair in isolated DC-DC converters and motor-drive front ends. The 2.5 mOhm RDS(on) and OptiMOS 6 trench architecture minimize both conduction and switching losses at 50-100 kHz operating frequencies. The 26 A continuous ID supports 2-3 kW converter stages when paired with a high-density ferrite transformer. Ensure adequate heatsinking via copper pours or an external heatsink attached to the exposed drain pad, and use a half-bridge driver with built-in dead-time generation.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPTG025N15NM6ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPTG020N15NM6ATMA1 | IPT067N20NM6ATMA1 | ISC016N08NM8ATMA1 | IAUCN08S7N024ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOG-8-1 (TOLG) | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same | PG-HSOG-8-1 (TOLG) - same |
| Drain-Source Voltage VDS | 150 V | 150 V | 200 V | 80 V | 80 V | 40 V |
| RDS(on) typ at VGS=10V | 2.5 mOhm | 2.0 mOhm | 6.7 mOhm | 1.6 mOhm | 2.4 mOhm | 1.0 mOhm |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Ключевые отличия
- 30 percent smaller footprint than D2PAK with equivalent thermal performance (против IRFB7534PBF (D2PAK 60V 160A MOSFET))
- OptiMOS 6 generation provides 30 percent figure-of-merit improvement (против IAUC100N04S6N028ATMA1 (OptiMOS 5 40V))
- Higher VDS rating than OptiMOS 5 alternatives at the same footprint (против ISC016N08NM8ATMA1 (OptiMOS 5 80V))
Заметки по проектированию
Estimated: at ID=20 A continuous and RDS(on)=2.5 mOhm, conduction loss is approximately 1.0 W. At 48 V to 12 V switching at 100 kHz with 50 percent duty, switching losses add approximately 0.5 W. Total 1.5 W dissipation in PG-HSOG-8-1 with a typical theta_JA of 40 C/W produces a 60 C junction rise above ambient, keeping TJ below 125 C in 65 C environments. Use a copper area of at least 6 cm squared on the drain tab as specified in the datasheet test condition.
The PG-HSOG-8-1 (TOLG) package requires careful PCB layout to minimize source inductance. Use the Kelvin-source pin (pin 4) for the gate-driver return path, not the power-source pins. Keep the gate-drive loop area under 10 mm squared by routing the gate trace directly between the driver output and the Kelvin pin. Place a 10 Ohm gate resistor in series to dampen parasitic ringing, and add a 100 nF ceramic bypass capacitor adjacent to the gate-driver supply pin.
Do not drive the gate below 6 V - RDS(on) increases dramatically and the device may operate in linear mode, causing thermal runaway. Do not exceed VGS(max) of 20 V (typical for Infineon OptiMOS 6) - check the datasheet for the exact value. Avoid exceeding VDS=150 V even during transients; use a TVS clamp or snubber on the drain if inductive kick is possible. Finally, do not solder without a proper reflow profile (peak 260 C, MSL1 floor life applies).
For half-bridge layouts using two IPTG025N15NM6ATMA1 parts, minimize the high-side-to-low-side loop inductance by placing the two MOSFETs on the same side of the board with a small commutation loop. Use an inner-layer copper pour for the phase node to reduce radiated EMI. Keep the gate-drive traces perpendicular to the power-loop direction to minimize capacitive coupling. Reference Infineon application note 'PCB Layout for OptiMOS Half-Bridges' for detailed layout guidance.
Информация о соответствии
RoHS compliant and halogen-free per Infineon OptiMOS 6 product family standard. Not AEC-Q100 qualified - for automotive applications refer to Infineon's dedicated OptiMOS automotive-grade parts.
