K3KL3L30QM-JGCT - LPDDR5X 64Gb 7500Mbps DRAM | Samsung
Артикул: K3KL3L30QM-JGCT ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K3KL3L30QM-JGCT Обзор
LPDDR5X (Low Power Double Data Rate 5X, per the JEDEC LPDDR5X standard family) is an extension of LPDDR5 that raises signaling speed and improves power efficiency for battery-operated and thermally constrained systems. In the memory hierarchy it sits as volatile main-system DRAM below persistent storage such as NAND flash and eMMC, providing the working memory bandwidth that CPUs, GPUs, and NPUs require.
Key features of the K3KL3L30QM-JGCT include its 64 Gbit density (8 GB equivalent per device), x64 organization for wide memory buses, and 7500 Mbps/pin data rate, which places it in the LPDDR5X performance tier used by flagship smartphones, tablets, AI edge accelerators, and automotive infotainment SoCs. As a Samsung third-generation 10nm-class DRAM product line part, it delivers higher bandwidth than LPDDR5 at lower power per transferred bit.
Technically, LPDDR5X operates with a low-voltage I/O rail (VDDQ around 0.3-0.5 V class, per Samsung LPDDR5X documentation) and uses advanced training, on-die termination, and link ECC-style features inherited from LPDDR5 to maintain signal integrity at multi-gigabit speeds. Ball-grid-array interconnects minimize parasitic inductance, enabling clean eye diagrams at 7500 Mbps when the PCB stackup follows Samsung's package-on-package and fly-by routing guidance.
Typical applications include flagship smartphone and tablet main memory, AI accelerator and NPU buffer memory, automotive domain-controller DRAM, and high-performance embedded and edge-server modules such as LPDDR5X SODIMMs and memory-down designs.
Design consideration: LPDDR5X signal integrity is highly layout sensitive - length-matched, reference-plane-continuous routing and strict power-integrity budgeting for VDDQ are mandatory; insufficient decoupling at 7500 Mbps manifests as training failures rather than gradual degradation.
This page adds value beyond the datasheet by synthesizing distributor stock levels, drop-in family alternatives, and practical design notes in one place.
Аналоги без доработки для K3KL3L30QM-JGCT — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K3KL3L30QM-JGCT (тот же форм-фактор и посадочное место) — отличается по Memory Type, Package, Product Status, Interface, Memory Size.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K3KL5L50QM-JGCT
✅ Прямая замена✓ В наличии
$64 / шт.
Открыть даташит →K3KL3L30DM-BGCU
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$45.9375 / шт.
Открыть даташит →K3KL3L30CM-BGCU
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
Уточнить цену
Открыть даташит →K3KLALA0DM-JGCT
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
Уточнить цену
Открыть даташит →K3KL9L90DM-JGCT
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$65.18 / шт.
Открыть даташит →K3KL3L30QM-JGCT Максимальные параметры и электрические характеристики
| Тип памяти | Volatile - DRAM |
| Technology | LPDDR5X |
| Размер памяти | 64 Gb |
| Memory Organization | x64 |
| Maximum Data Rate | 7500 Mbps/pin |
| Тип интерфейса | Parallel LPDDR5X |
| Тип монтажа | Surface Mount |
| Product Status | Sampling (per distributor data) |
| Packaging | Plateau (tray style, per distributor data) |
Руководство по цоколевке K3KL3L30QM-JGCT в корпусе standard
Цоколевка для K3KL3L30QM-JGCT (корпус standard). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для K3KL3L30QM-JGCT.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K3KL3L30QM-JGCT подходит для 6 применениеs: Flagship Smartphone Main Memory, AI Edge Accelerator and NPU Buffer Memory, Automotive Domain Controller Memory, Tablets and Premium Laptops (Memory-Down DRAM), 5G Modems and Networking Edge Equipment, Camera and Vision Processing Systems.
Flagship Smartphone Main Memory
Flagship smartphones pair multi-core SoCs with high-speed LPDDR5X main memory, and the K3KL3L30QM-JGCT fits this role with 64 Gb of DRAM, x64 organization, and a 7500 Mbps data rate that keeps application processors, ISPs, and modems fed with bandwidth. Samsung's LPDDR5X generation delivers about 20% better power efficiency than LPDDR5, directly extending battery life under heavy multitasking. The FBGA package supports compact memory-down layouts or package-on-package stacking near the SoC. Layout teams must follow Samsung's length-matched, reference-plane-continuous routing guidance and complete read/write training at target speed; insufficient VDDQ decoupling at 7500 Mbps typically shows up as training failures rather than gradual errors.
Рекомендуется
AI Edge Accelerator and NPU Buffer Memory
On-device AI inference needs DRAM bandwidth as much as raw TOPS, because activation maps and weights stream continuously between the NPU and memory. The K3KL3L30QM-JGCT provides 7500 Mbps per pin over a x64 bus, giving the aggregate bandwidth that edge NPUs require while LPDDR5X's improved power efficiency limits thermal load in fanless enclosures. Its 64 Gb capacity accommodates quantized transformer and vision models locally. Typical usage places the device on short memory-down traces to the SoC with the PMIC's VDDQ rail tightly decoupled; the design trade-off versus stacked HBM is lower bandwidth at far lower cost and power, which suits edge inference rather than datacenter training.
Рекомендуется
Automotive Domain Controller Memory
Automotive domain controllers and cockpit SoCs consolidate infotainment, ADAS sensor fusion, and display pipelines on one processor, all of which demand sustained DRAM bandwidth. Samsung explicitly targets its LPDDR5X family at automotive devices, and the 64 Gb, 7500 Mbps K3KL3L30QM-JGCT supplies the memory behind cockpit SoCs running navigation, voice assistants, and multiple cameras simultaneously. Power efficiency matters for thermal management in sealed enclosures. Note that automotive deployment requires confirming the qualified temperature-range and AEC-grade ordering variant with Samsung, since the standard commercial part's qualification status is not stated in public distributor data; plan the dual-sourcing decision at design freeze.
Рекомендуется
Tablets and Premium Laptops (Memory-Down DRAM)
Thin tablets and fanless premium laptops use memory-down LPDDR5X to save board space versus SODIMM or soldered DDR modules while cutting idle power. The K3KL3L30QM-JGCT's 64 Gb density and x64 bus let designers populate one or two devices per channel to reach 8-16 GB configurations, and the 7500 Mbps rate supports integrated-GPU frame buffers at high resolutions. The FBGA footprint enables placement on both sides of the board near the application processor. Designers should budget PDN impedance per Samsung's recommendation and run full training at the target frequency; the trade-off versus LPDDR5 is minimal, since LPDDR5X improves efficiency while remaining protocol-compatible for most LPDDR5-capable controllers.
Рекомендуется
5G Modems and Networking Edge Equipment
5G small cells, CPE gateways, and edge network appliances process high packet rates that require fast, low-power DRAM buffers. The K3KL3L30QM-JGCT at 7500 Mbps provides the burst bandwidth for line-rate forwarding tables, DMA descriptors, and accelerated crypto contexts, while x64 organization matches the wide buses of networking SoCs. LPDDR5X's power efficiency reduces the cooling budget in passively cooled outdoor equipment. Typical designs place one or two devices per channel with fly-by address routing; the key consideration is ensuring the SoC memory controller's training algorithm supports 7500 Mbps operation and that VDDQ sequencing follows the PMIC's power-up order requirements for LPDDR5X devices.
Рекомендуется
Camera and Vision Processing Systems
High-resolution and multi-camera vision systems stream sensor data through ISPs into DRAM continuously, making memory bandwidth and power the binding constraints. The K3KL3L30QM-JGCT's 7500 Mbps LPDDR5X interface sustains the write bandwidth needed for 4K/8K video and multi-sensor fusion, and 64 Gb capacity buffers several frames for noise reduction, HDR merging, and encoding pipelines. Power efficiency per bit reduces heat in sealed camera housings. Integration typically pairs the DRAM with the vision SoC on short memory-down traces; designers should verify that sustained write throughput at temperature extremes stays within the LPDDR5X specification and include periodic refresh overhead in bandwidth budgets.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K3KL3L30QM-JGCT — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K3KL5L50QM-JGCT | K3KL3L30DM-BGCU | K3KL3L30CM-BGCU |
|---|---|---|---|---|
| Package | FBGA (QM-JGCT package family) | FBGA - same QM-JGCT package family | FBGA - DM-BGCU code (different footprint) | FBGA - CM-BGCU code (different footprint) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 64 Gb | 128 Gb | 64 Gb | 64 Gb |
| Technology | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Memory Organization | x64 | x64 | x64 | x64 |
| Memory Interface | Parallel LPDDR5X | Parallel LPDDR5X | Parallel LPDDR5X | Parallel LPDDR5X |
Ключевые отличия
- Same-package higher-density upgrade path (против K3KL5L50QM-JGCT)
- 7500 Mbps LPDDR5X speed class (против LPDDR5-class DRAM)
- x64 wide-bus organization (против narrower x16/x32 DRAM organizations)
Заметки по проектированию
At 7500 Mbps per pin, LPDDR5X routing margins are tight. Keep data-group traces length-matched within the tolerance stated in the Samsung package application note, route over unbroken reference planes, and minimize stubs on CA and DQ nets. Perform SI simulation with the Samsung IBIS model before tape-out, and plan for post-assembly read/write training margin reports from the SoC memory controller to confirm eye closure. Treat training failures at target speed as a layout or PDN defect, not a silicon fault, since LPDDR5X degrades sharply rather than gracefully near its margins.
LPDDR5X uses a reduced VDDQ class compared with LPDDR5, and Samsung states the generation targets about 20% better power efficiency. Engineer the VDDQ power distribution network to the PDN impedance target in the Samsung LPDDR5X design guide: place bulk and high-frequency ceramic decoupling adjacent to the ball field, follow the PMIC-recommended power-up sequencing order for VDD1/VDD2/VDDQ, and verify droop during simultaneous write bursts. Undersized decoupling typically manifests as intermittent training errors or reduced sustained bandwidth under thermal soak rather than outright failure at room temperature.
Samsung LPDDR5X orderable package suffixes (QM-JGCT, DM-BGCU, CM-BGCU, etc.) denote different FBGA package codes with different ball maps and dimensions - they are not footprint-identical. Never substitute suffix variants without comparing both package drawings. Also note the part status is Sampling, so density, speed-bin availability, and datasheet revisions may change between sampling and full production; lock the exact orderable MPN and datasheet revision at design freeze, and confirm temperature-range qualification before committing to automotive platforms.
Информация о соответствии
Compliance data was not present in the verified web data. Samsung generally publishes RoHS/REACH status per part on its official product pages; confirm via the Samsung Semiconductor product page or distributor compliance documents before procurement.
