K3KL8L80QM-MUCT - 32Gb LPDDR5X DRAM | Samsung
Артикул: K3KL8L80QM-MUCT ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $17.2 | $172,00 |
| 100 | $15.8 | $1.580,00 |
| 500 | $14.6 | $7.300,00 |
| 1.000 | $13.4 | $13.400,00 |
K3KL8L80QM-MUCT Обзор
LPDDR (Low Power Double Data Rate) SDRAM is a class of mobile DRAM optimized for high bandwidth at low power. Within the memory hierarchy, LPDDR5X sits above LPDDR5 and LPDDR4X as a next-generation low-power DRAM type, belonging to the broader DRAM -> semiconductor memory -> semiconductor taxonomy. LPDDR5X increases I/O speed over LPDDR5 while lowering operating voltage, delivering higher bandwidth per watt - a critical metric for battery-powered AI workloads.
Key characteristics of the K3KL8L80QM-MUCT include its 32 Gb (4 GB) monolithic density, LPDDR5X interface with data rates in the multi-gigabit-per-second class per pin, and a low-voltage core/IO power architecture typical of the LPDDR5X standard. The QM speed grade and MUCT packaging suffix encode speed bin, operating temperature class, and packing format used across Samsung mobile DRAM numbering.
Architecturally, the device is organized as a DRAM array accessed through a high-speed LPDDR5X channel interface with burst-oriented operation, bank-group parallelism, and dynamic voltage/frequency scaling features. Samsung implements on-die termination and training features required by the LPDDR5X protocol to maintain signal integrity at the elevated data rates.
Typical applications include flagship smartphone AP memory (paired with Snapdragon or Exynos application processors), AI accelerator companion memory in edge modules, automotive infotainment memory subsystems, and high-performance portable computing devices such as tablets and 5G modems.
A key design consideration: LPDDR5X signal integrity demands strict length matching, on-die termination tuning, and reference-plane-continuous PCB stackup; memory controller firmware must support LPDDR5X training sequences.
This page synthesizes distributor sourcing data, same-family drop-in alternatives, and practical design notes not found in a single manufacturer document, streamlining procurement and second-source planning for this memory IC.
Аналоги без доработки для K3KL8L80QM-MUCT — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K3KL8L80QM-MUCT (тот же форм-фактор и посадочное место) — отличается по Interface, Package, Density, Memory Type, Organization.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K3KL8L80CM-MGCT
✅ Прямая замена✓ В наличии
Уточнить цену
Открыть даташит →K3LK8L80CM-MGCT
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
Уточнить цену
Открыть даташит →K3LKCKC0BM-MGCP
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$65.625 / шт.
Открыть даташит →K3LKBKB0BM-MGCP
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$46.62 / шт.
Открыть даташит →K3KL7L70EM-MGCU
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$12 / шт.
Открыть даташит →K3KL8L80QM-MUCT Максимальные параметры и электрические характеристики
| Тип памяти | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) |
| Speed Grade | QM (per Samsung part numbering) |
| Корпус | FBGA (original package, 315-ball class) |
| Тип монтажа | Surface Mount |
| Интерфейс | LPDDR5X channel interface |
| Series | LPDDR5X |
| Бренд | Samsung Semiconductor |
| Packaging Suffix | MUCT |
| Application Segment | Mobile / AI edge computing |
Руководство по цоколевке K3KL8L80QM-MUCT в корпусе fbga (original package, 315-ball class)
Цоколевка для K3KL8L80QM-MUCT (корпус fbga (original package, 315-ball class)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для K3KL8L80QM-MUCT.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K3KL8L80QM-MUCT подходит для 6 применениеs: Flagship Smartphone Main Memory, AI Edge Computing Modules, Automotive Infotainment Systems, 5G Modems and Connected Devices, Tablets and Portable Computing, Test and Measurement Instruments.
Flagship Smartphone Main Memory
The K3KL8L80QM-MUCT serves as the main system DRAM in flagship smartphones, where its 32 Gb (4 GB) capacity and LPDDR5X interface provide the bandwidth needed by flagship SoCs such as Snapdragon and Exynos application processors. Multi-gigabit-per-second per-pin data rates support high-refresh displays, computational photography, and on-device AI inference. The part is PoP- or package-mounted adjacent to the AP with length-matched channel routing; its LPDDR5X low-voltage operation reduces memory subsystem power, which is typically a top-3 battery consumer. Speed-bin qualification against the SoC memory compatibility list is the key integration step.
Рекомендуется
AI Edge Computing Modules
Edge AI accelerators and smart camera modules use the K3KL8L80QM-MUCT as activation/frame-buffer DRAM, because LPDDR5X delivers higher bandwidth per watt than LPDDR5 at lower operating voltage. The 32 Gb (4 GB) density fits typical CNN feature-map working sets for real-time object detection at multi-frame-per-second rates. The device mounts on a dense FBGA land pattern; memory-controller training handles timing closure at LPDDR5X data rates. Designers should budget bandwidth headroom, since AI inference and streaming share the same channel and overflow forces costly external DRAM upgrades or model quantization.
Рекомендуется
Automotive Infotainment Systems
Automotive cockpit SoCs increasingly qualify LPDDR5X for infotainment domains, and the K3KL8L80QM-MUCT provides 32 Gb (4 GB) of channel memory for navigation rendering, multi-display output, and voice-assistant processing. LPDDR5X bandwidth sustains 3D HMI rendering while low-voltage operation reduces thermal load in enclosed head units. Integration requires confirming the temperature class and the OEM SoC approved-memory list, since commercial mobile bins are generally used for infotainment rather than safety domains. Drop-in second-sourcing within the Samsung LPDDR5X family simplifies supply continuity across vehicle program lifecycles.
Рекомендуется
5G Modems and Connected Devices
5G modems, CPE gateways, and connected tablets use the K3KL8L80QM-MUCT as protocol and packet-buffer memory. LPDDR5X multi-gigabit data rates keep pace with multi-gigabit 5G throughput while the 32 Gb density supports deep buffering for millimeter-wave peak bursts. The FBGA surface-mount package suits dense modem boards; low-voltage LPDDR5X operation trims standby draw important for battery-powered CPE. Design attention should go to power-integrity on VDDQ rails, since LPDDR5X termination currents are dynamic and peak during simultaneous read/write bursts across bank groups.
Рекомендуется
Tablets and Portable Computing
Premium tablets and foldable devices adopt the K3KL8L80QM-MUCT for combined OS, app, and graphics memory. The 4 GB monolithic density allows multi-die stacking to reach 8-16 GB system memory within thin form factors, while LPDDR5X bandwidth supports high-resolution displays and desktop-class browser workloads. Thermal constraints in fanless enclosures favor the LPDDR5X low-voltage interface, which cuts memory-subsystem heat compared with LPDDR5 at equivalent bandwidth. PCB designers must maintain strict package-to-AP length matching in the thin stackup typical of tablet boards to preserve eye margin at maximum data rate.
Рекомендуется
Test and Measurement Instruments
Portable oscilloscopes, logic analyzers, and protocol testers embed the K3KL8L80QM-MUCT as high-speed capture buffer memory, since LPDDR5X sustained bandwidth supports continuous streaming acquisition at hundreds of megasamples per second into a 4 GB per-die buffer. The FBGA package mounts on high-layer-count instrument boards with dedicated power planes; the memory controller runs calibration training at power-up to close timing at full data rate. Procurement teams value the drop-in Samsung LPDDR5X family alternatives for long instrument service lifetimes, since speed-bin substitution keeps the footprint and firmware structure unchanged.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K3KL8L80QM-MUCT — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K3KL8L80CM-MGCT | K3LK8L80CM-MGCT | K3LKCKC0BM-MGCP | K3LKBKB0BM-MGCP | K3KL7L70EM-MGCU |
|---|---|---|---|---|---|---|
| Package | FBGA (315-ball class, original package) | FBGA (315-ball class) - same | FBGA (315-ball class) - same | FBGA (LPDDR5X family) - same family | FBGA (LPDDR5X family) - same family | FBGA (LPDDR5X family) - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Speed Grade Code | QM | CM | CM | B | B | E |
| Lifecycle Status | Active | Active | Active | Active | Active | Active |
| Typical Use | Flagship smartphone / AI edge memory | Smartphone / tablet memory (lower bin) | Smartphone / tablet memory (lower bin) | Mobile / AI companion memory | High-density mobile memory | Mid-tier mobile memory |
Ключевые отличия
- Top speed bin in the 32 Gb LPDDR5X family (против K3KL8L80CM-MGCT)
- 32 Gb monolithic density reduces die count (против K3KL7L70EM-MGCU)
- LPDDR5X interface with lower operating voltage (против LPDDR5 predecessors in the Samsung lineup)
Заметки по проектированию
LPDDR5X channel routing to the K3KL8L80QM-MUCT must maintain length matching within the tolerance specified by the SoC memory design guide (typically a few mils within a byte lane). Use a stackup with unbroken reference planes under all address/command and data groups. At multi-Gbps data rates, via stubs and plane splits dominate eye closure - keep escape routing short and reference the same ground plane end-to-end. Rely on on-die termination and read/write training for final margin, but do not substitute layout care for training range.
LPDDR5X devices draw dynamic termination current on VDDQ that peaks during simultaneous read/write bursts. Estimated: budget VDDQ decoupling with a mix of bulk (10-22 uF) plus high-frequency (0.1 uF) ceramics placed within 2-3 mm of the ball farm, and verify rail droop against the controller's worst-case simultaneous burst pattern in SI simulation. Confirm exact VDD/VDDQ values from the Samsung datasheet for the QM speed bin before finalizing the power tree, as LPDDR5X voltage levels are bin-dependent.
Verify the exact MPN ordering: the correct part is K3KL8L80QM-MUCT; transposed strings such as K3LK8L80QM-MUCT circulate in search queries and can return a different speed bin or family. When substituting the CM speed grade (K3KL8L80CM-MGCT), re-run memory training and confirm the platform approved-memory list - firmware boot parameters and training result tables differ between bins. LPDDR5X FBGA parts are moisture-sensitive: observe MSL floor life and bake per the Samsung packing datasheet before reflow.
Информация о соответствии
Compliance status not stated in retrieved distributor data; obtain Samsung RoHS/REACH certificates for the exact orderable code before production. Not an automotive-qualified orderable code.
