K3LKJKJ0CM-MUCP - 24Gb LPDDR5 DRAM 6400Mbps | Samsung
Артикул: K3LKJKJ0CM-MUCP ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K3LKJKJ0CM-MUCP Обзор
LPDDR5 (Low Power Double Data Rate 5) is a JEDEC-defined DRAM interface standard optimized for mobile, automotive and edge-computing platforms. In the memory hierarchy it sits as the main system DRAM: a volatile, high-bandwidth working memory positioned below CPU caches but above storage such as UFS or eMMC. Compared with LPDDR4X, LPDDR5 raises pin speed to 6400 Mbps, adds deep-sleep modes and per-bank refresh for roughly 20% power savings at comparable workloads.
Key features of the K3LKJKJ0CM-MUCP include 24 Gbit density per package, 315-ball fine-pitch BGA surface-mount packaging, 6400 Mbps maximum transfer rate, and the LPDDR5 triple-rail voltage scheme (1.8 V / 1.05 V / 0.9 V) that separates core and I/O domains for dynamic power optimization. Samsung lists related automotive-grade variants in the same K3LKJ family on a 315 FBGA footprint, enabling common-board designs across temperature grades.
Architecturally, LPDDR5 devices use bank-group organization, a link ECC option and WCK/flexible clocking to sustain high bandwidth at low idle power. The 24 Gbit organization (x32-class mobile DRAM interface) makes the part suitable for stacking or pairing to reach 6 GB and 12 GB system memory configurations in SoC platforms from Qualcomm, MediaTek and similar vendors.
Typical applications include automotive ADAS and infotainment memory subsystems, flagship smartphone and tablet main memory, and embedded edge-AI computing modules where bandwidth-to-power ratio is critical.
A key design consideration is power integrity: the separated 0.9 V VDDQ rail demands tight decoupling and careful length-matched fly-by-style routing to the SoC memory controller at 6400 Mbps.
This page synthesizes verified distributor data, same-family drop-in alternatives, and sourcing guidance not found in any single datasheet excerpt.
Аналоги без доработки для K3LKJKJ0CM-MUCP — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K3LKJKJ0CM-MUCP (тот же форм-фактор и посадочное место) — отличается по Interface, Package, Density, Operating Temperature, Mounting Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K3LKJKJ0CM-MFCP
✅ Прямая замена✓ В наличии
$21.9 / шт.
Открыть даташит →K3LKJKJ0CM-MHCP
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K3LK8K80CM-MFCP
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
Уточнить цену
Открыть даташит →K3LK4K40CM-BGCP
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$37.8 / шт.
Открыть даташит →K3LK2K20CM-JFCP
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
Уточнить цену
Открыть даташит →K3LKJKJ0CM-MUCP Характеристики
| Manufacturer | Samsung Electronics |
| Product Type | LPDDR5 SDRAM |
| Density | 24 Gbit (3 GB) |
| Корпус | 315-ball FBGA |
| Maximum Data Rate | 6400 Mbps |
| VDD2 Supply Voltage | 1.8 V |
| VDD1 Supply Voltage | 1.05 V |
| VDDQ Supply Voltage | 0.9 V |
| Интерфейс | LPDDR5 (JEDEC standard) |
| Memory Category | DRAM (volatile memory) |
| Тип монтажа | Surface Mount |
| Product Status | Active (per Samsung LPDDR5 family listings) |
Руководство по цоколевке K3LKJKJ0CM-MUCP в корпусе 315-ball fbga
Цоколевка для K3LKJKJ0CM-MUCP (корпус 315-ball fbga). Нумерация выводов, функции и схемы подключения определены в техническом описании производителя. Обратитесь к нему для точного посадочного места и рекомендаций по пайке.
Нет подробных данных о распиновке для K3LKJKJ0CM-MUCP.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K3LKJKJ0CM-MUCP подходит для 6 применениеs: Automotive ADAS and Sensor Fusion, Automotive Infotainment and Cockpit, Smartphone and Tablet Main Memory, Edge-AI and Embedded Computing Modules, Telematics and Connectivity Gateways, Test, Measurement and Prototyping Platforms.
Automotive ADAS and Sensor Fusion
The K3LKJKJ0CM-MUCP provides 3 GB of LPDDR5 working memory for ADAS domain controllers that fuse camera, radar and lidar data. Its 6400 Mbps pin speed and the LPDDR5 family's up to 51.2 GB/s aggregate bandwidth sustain the sustained-read workloads of perception pipelines on Qualcomm Ride or similar automotive SoCs. The 1.8/1.05/0.9 V triple-rail scheme allows the PMIC to scale VDDQ in low-duty scenarios, trimming system power. Samsung lists the related K3LKJKJ0CM-MFCP in its automotive LPDDR5 table, and the shared 315-ball FBGA footprint lets one PCB serve both grade variants - designers should qualify the suffix that matches the program's AEC-Q100 requirement.
Рекомендуется
Automotive Infotainment and Cockpit
Digital cockpit and infotainment head units require memory that can feed multiple high-resolution displays and audio streams simultaneously. The K3LKJKJ0CM-MUCP's 24 Gbit (3 GB) density and 6400 Mbps interface give cockpit SoCs the bandwidth for GPU frame buffers and map rendering, while LPDDR5 deep-sleep modes keep standby current low enough for always-on wake-word designs. Because the 315-ball FBGA footprint is common across the Samsung K3LK LPDDR5 family, a single infotainment PCB can be populated with different densities to create trim-level variants. Designers must budget careful VDDQ decoupling, since display bandwidth spikes stress the 0.9 V rail during frame transitions.
Рекомендуется
Smartphone and Tablet Main Memory
In flagship and premium-tier smartphones, LPDDR5 is the main system DRAM, and the K3LKJKJ0CM-MUCP supplies 3 GB per package at 6400 Mbps - the speed class Samsung cites as delivering roughly 20% power savings over LPDDR4X for equivalent workloads. The package mounts directly beside or under the application processor (PoP or side-by-side) with the 0.9 V VDDQ rail routed on the shortest possible stubs. Per-bank refresh improves effective bandwidth during mixed app usage, and the 315-ball FBGA is the standard mobile footprint that contract manufacturers already support. Multiple packages can be stacked or paired to reach 6 GB or 9 GB configurations.
Рекомендуется
Edge-AI and Embedded Computing Modules
Edge-AI compute modules (SMARC, COM Express compact carriers) pair an LPDDR5 DRAM such as the K3LKJKJ0CM-MUCP with an AI-capable SoC to run vision and speech models locally. The 24 Gbit package provides enough working set for quantized CNN feature maps while the 6400 Mbps interface keeps inference latency bounded by compute, not memory. The triple-rail power architecture (1.8 V / 1.05 V / 0.9 V) lets module designers gate VDD1 and VDDQ independently for aggressive idle power targets in battery-backed gateways. The common 315-ball FBGA footprint across the Samsung LPDDR5 family enables one carrier PCB design to scale from 1.5 GB to 6 GB across product tiers.
Рекомендуется
Telematics and Connectivity Gateways
Automotive telematics control units and 5G gateways buffer large packet streams and support secure OTA update staging, which favors the K3LKJKJ0CM-MUCP's 3 GB capacity and high sustained bandwidth. LPDDR5's deep-sleep and per-bank refresh features matter here because telematics units must remain responsive in parked vehicles with strict quiescent budgets; the 0.9 V VDDQ domain can be throttled between communication windows. The 315-ball FBGA package is proven in automotive reflow flows, and Samsung's automotive family listing confirms the platform's automotive pedigree. Use the same footprint with grade variants (MFCP) to unify the BOM across consumer and automotive programs.
Рекомендуется
Test, Measurement and Prototyping Platforms
Development boards and validation platforms for new LPDDR5 SoCs frequently use the K3LKJKJ0CM-MUCP because its 24 Gbit density and 6400 Mbps rate represent the mainstream automotive/mobile operating point. Lab teams exercise eye-margin, write-leveling and power-mode transition tests across the 1.8/1.05/0.9 V rails, and the standard 315-ball FBGA footprint allows swapping in other K3LK-family densities to characterize firmware across configurations. Measurement instrumentation benefits from the part's well-defined JEDEC LPDDR5 protocol compliance, making it a reference vehicle for controller bring-up. Stock the MFCP grade alongside the MUCP to validate temperature-dependent timing on one PCB.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K3LKJKJ0CM-MUCP — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K3LKJKJ0CM-MFCP | K3LKJKJ0CM-MHCP | K3LK8K80CM-MFCP | K3LK4K40CM-BGCP | K3LK2K20CM-JFCP |
|---|---|---|---|---|---|---|
| Package | 315-ball FBGA | 315-ball FBGA - same | 315-ball FBGA - same | 315-ball FBGA - same | 315-ball FBGA - same | 315-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gbit (3 GB) | 24 Gbit (3 GB) | 24 Gbit (3 GB) | 16 Gbit class | 8 Gbit class | 4 Gbit class |
| Supply Rails | 1.8 V / 1.05 V / 0.9 V | 1.8 V / 1.05 V / 0.9 V | 1.8 V / 1.05 V / 0.9 V | 1.8 V / 1.05 V / 0.9 V | 1.8 V / 1.05 V / 0.9 V | 1.8 V / 1.05 V / 0.9 V |
| Temperature/Grade Suffix | MUCP | MFCP (automotive-listed) | MHCP | MFCP | BGCP | JFCP |
| Interface Standard | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 |
| Product Status | Active | Active | Active (distributor stocked) | Active | Active | Active |
Ключевые отличия
- Identical die with grade flexibility (против K3LKJKJ0CM-MFCP)
- Higher per-package density than same-footprint siblings (против K3LK8K80CM-MFCP)
- LPDDR5 power efficiency over prior generation (против LPDDR4X equivalents)
Заметки по проектированию
The K3LKJKJ0CM-MUCP requires three rails - 1.8 V (VDD2), 1.05 V (VDD1) and 0.9 V (VDDQ). Use a PMIC with dedicated LPDDR5 rail outputs so sequencing and voltage scaling follow the JEDEC LPDDR5 power-state machine. Place bulk capacitance (e.g., 22-47 uF class) per rail near the DRAM plus dense 0.1 uF ceramics at each ball cluster, concentrating the largest count on VDDQ, which carries the fastest switching currents at 6400 Mbps. Estimated: at full-bandwidth bursts, VDDQ transient droop must stay within the LPDDR5 eye diagram budget - verify with the controller's write-leveling and read-training results.
Route the LPDDR5 command/address and data bus with length-matched traces; keep data-line skew within the controller's training window and reference DQ traces to a solid VSS plane beneath the 315-ball FBGA. Avoid routing high-speed signals under the package center where the ball array is densest. For 6400 Mbps operation, fly-by-style CA routing with on-die termination (ODT) settings from the Samsung datasheet simplifies topology versus LPDDR4 designs. Recommended stack-up is at least 4 layers with dedicated power/ground planes; follow your SoC vendor's LPDDR5 layout application note.
Do not treat Samsung suffix codes as interchangeable: MUCP, MFCP and MHCP encode different temperature/qualification grades on the same 24 Gbit die, and automotive programs typically require the MFCP variant listed in Samsung's automotive LPDDR5 table. When sourcing on the open market, demand date-code and COC documentation - LPDDR5 is a frequent target for remarked parts. Finally, confirm your SoC memory controller supports the part's speed bin and organization before BOM release; a footprint-compatible part with an unsupported bin will fail training at 6400 Mbps.
Информация о соответствии
Verified distributor data does not include explicit RoHS/REACH/AEC-Q100 statements for the MUCP suffix. The related K3LKJKJ0CM-MFCP appears in Samsung's automotive LPDDR5 list; automotive qualification must be confirmed per suffix from official Samsung documentation.
