MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology
Артикул: MT41K256M16 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.46 | $34,60 |
| 100 | $3.05 | $305,00 |
| 500 | $2.72 | $1.360,00 |
| 1.000 | $2.42 | $2.420,00 |
MT41K256M16 Обзор
DDR3L SDRAM is a class of synchronous dynamic random-access memory that transfers data on both clock edges (double data rate) and uses a source-synchronous strobe-based interface. Within the memory hierarchy, the MT41K256M16 sits at the component level of DRAM main memory, below DIMM modules and above the raw DRAM core, serving as the primary working memory for processors, FPGAs, and SoCs.
Key features of the MT41K256M16 family include the 4Gbit single-die density organized as 256 megawords x 16 bits, an internal 8-bank architecture for improved parallelism, and a 1.35V VDD supply with 1.5V-compatible operation. The x16 organization reduces external component count in 16-bit or 32-bit bus systems compared with x4/x8 parts, which use a different 78-ball outline.
Speed grades in the family span DDR3L-1066 through DDR3L-2133 (for example -125 and -093/-107 suffices), with the exact speed grade encoded in the full ordering MPN such as MT41K256M16TW-107:P or MT41K256M16RE-125. On-die termination (ODT), DLL-based timing, and programmable CAS latency provide signal-integrity and latency tuning options for FPGA and processor memory controllers.
Typical applications include embedded processor memory for Xilinx Zynq and Artix/Kintex FPGA platforms, industrial controllers, networking equipment, automotive infotainment, and consumer electronics where a 512 MB single-chip address space at 1.35V is required.
Design considerations: DDR3L Fly-by routing, VTT termination, and ZQ calibration resistor placement dominate layout quality. Always derate address/command timing at elevated temperature, and confirm the JEDEC-required initialization sequence in the memory controller.
This page synthesizes distributor sourcing data, cross-brand drop-in equivalents (Samsung, Nanya), and practical DDR3L design notes not found in the standard Micron datasheet, with pricing as of 2026-10-11.
Аналоги без доработки для MT41K256M16 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT41K256M16 (тот же форм-фактор и посадочное место) — отличается по Package, Supply Voltage, Data Rate, Memory Type, Operating Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT41K256M16TW-107:P
✅ Прямая замена✓ В наличии
$16 / шт.
Открыть даташит →MT41K256M16TW-093:P
✅ Прямая замена✓ В наличии
$15.5 / шт.
Открыть даташит →MT41K256M16RE-125:D
✅ Прямая замена✓ В наличии
$4.19 / шт.
Открыть даташит →MT41K256M16V00HWC1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K4B4G1646E-BYMA
✅ Прямая замена✓ В наличии
$14.3182 / шт.
Открыть даташит →NT5CC256M16ER-EKI
✅ Прямая замена✓ В наличии
$16.7045 / шт.
Открыть даташит →MT41K256M16 Характеристики
| Тип памяти | DDR3L SDRAM (1.35V) |
| Размер памяти | 4 Gbit |
| Организация памяти | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35 V (1.5V-compatible mode supported) |
| Banks | 8 |
| Корпус | 96-ball FBGA |
| Тип монтажа | Surface Mount |
| Speed Grade Options | -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options] |
| Интерфейс | Parallel, source-synchronous DDR |
| On-Die Termination | Yes (ODT) |
| Refresh | 8K refresh cycles / 64 ms |
| Die Revision | Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs |
| Статус RoHS | Compliant |
| ECCN | EAR99 |
| Lead Free | Yes (per DigiKey product listing) |
Руководство по цоколевке MT41K256M16 в корпусе 96-ball fbga
Цоколевка для MT41K256M16 (корпус 96-ball fbga). Нумерация выводов, функции и схемы подключения определены в техническом описании производителя. Обратитесь к нему для точного посадочного места и рекомендаций по пайке.
Нет подробных данных о распиновке для MT41K256M16.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
MT41K256M16 подходит для 6 применениеs: FPGA Embedded Memory, Industrial Automation Controllers, Networking and Communications Equipment, Automotive Infotainment and Telematics, Consumer Electronics and Smart Home, Test and Measurement Instrumentation.
FPGA Embedded Memory
The MT41K256M16 is the canonical DDR3L choice for Xilinx 7-series, Artix, Kintex, and Zynq SoC memory interfaces. Its 256M x 16 organization matches the 16-bit data width commonly configured in the Xilinx Memory Interface Generator (MIG), and its 1.35V operation keeps I/O bank voltage budgets aligned. A single chip provides 512 MB of working memory for frame buffers, soft-CPU program memory, and DSP coefficient storage. Performance depends on speed grade selection: a -125 part sustains DDR3L-1600 (12.8 GB/s peak at x16), while -093 parts reach 2133 MT/s where the FPGA supports it. Place the DRAM within short fly-by routing distance of the FPGA, follow MIG-calibrated termination, and budget ZQ calibration resistance. Xilinx reference designs validate initialization, training, and ODT settings directly against Micron MT41K parts.
Рекомендуется
Industrial Automation Controllers
Industrial PLCs, HMIs, and motion controllers need 256 MB-plus of volatile working memory with 1.35V efficiency and long-term availability, which is exactly what the MT41K256M16 delivers. The 96-ball FBGA withstands vibration better than discrete-packaged alternatives, and DDR3L operation reduces DRAM core power versus 1.5V DDR3 - valuable in sealed enclosures with limited airflow. Industrial builds typically select the -125 (1600 MT/s) grade because most industrial processors and FPGAs do not exceed 400 MHz DDR clocks, trading unused bandwidth for margin and cost. Use industrial temperature suffixes where specified, apply conformal-coating-aware layout for humidity resistance, and confirm the Micron product-change-notification subscription for the exact full MPN since some suffixes carry estimated EOL windows. Vendor alternatives (Samsung K4B4G1646E) provide second-source risk mitigation.
Рекомендуется
Networking and Communications Equipment
Switches, routers, and baseband cards use the MT41K256M16 for packet buffers, routing tables, and control-plane memory. The 4Gbit density provides a 512 MB address space from a single x16 die, simplifying BOM versus stacking two 2Gbit chips, and the 8-bank architecture supports the interleaved access patterns typical of packet processing. At DDR3L-1866 or -2133 speed grades (TW-107/TW-093 variants), a x16 device supplies up to about 4 GB/s of peak bandwidth per chip, and two devices in 32-bit configuration double that. Layout demands disciplined fly-by address/command routing with per-byte length matching to DQS, controlled-impedance stackups, and VTT plane segmentation. Network equipment running 24/7 should enable controller-level refresh scheduling and ECC in software where the processor supports inline ECC over 16-bit DRAM.
Рекомендуется
Automotive Infotainment and Telematics
Head units, digital clusters, and telematics gateways deploy the MT41K256M16 (automotive-temperature suffixes) for navigation map caching, graphics frame buffers, and application working memory. DDR3L's 1.35V supply lowers power dissipation in passively cooled dashboards, and the FBGA package meets AEC-grade mechanical robustness requirements when the ordering MPN specifies automotive qualification. Typical configurations pair two x16 devices in 32-bit mode for 1 GB of graphics memory. Designers must derate refresh timing at the 85C to 105C zone temperatures common behind windshields - above 85C the datasheet requires 2x refresh rate, increasing current draw. Verify the specific full MPN is the automotive-qualified suffix, since standard commercial parts do not carry automotive qualification even though they are electrically identical.
Рекомендуется
Consumer Electronics and Smart Home
Set-top boxes, smart displays, IP cameras, and smart-home hubs use the MT41K256M16 where Linux-class SoCs require 256 MB to 512 MB of DRAM at consumer price points. The 1.35V DDR3L operation reduces both power consumption and thermal design cost in fanless plastic enclosures, and the single-chip 4Gbit x16 configuration minimizes PCB area versus two-package solutions. Commercial temperature suffixes such as MT41K256M16V00HWC1 (widely stocked at DigiKey with same-day shipping) suit these cost-sensitive builds. System designers should budget the DDR3L initialization sequence in the SoC boot ROM, place the ZQ calibration resistor precisely, and keep the 96-ball FBGA within the recommended reflow profile to avoid solder-ball opens - a common consumer-production defect. Cost comparisons versus Samsung and Nanya equivalents favor whichever vendor has current commodity pricing.
Рекомендуется
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators use DDR3L SDRAM for waveform capture memory and instrument-state storage. The MT41K256M16 fits acquisition subsystems that stream ADC data into buffer memory: a single x16 device offers 512 MB of capture depth, and its DDR3L-1866/2133 grades provide the bandwidth needed to sustain continuous writes from high-rate ADCs using write-burst interleaving across the 8 banks. Instruments benefit from the tight timing documentation in Micron's datasheet, enabling deterministic controller tuning. For measurement integrity, isolate DRAM power planes from analog front-end supplies, use point-to-point routing with on-die termination enabled, and characterize write-leveling at production temperature extremes. Multi-device arrays of four to eight MT41K256M16 chips provide multi-gigabyte capture buffers in 64-bit to 128-bit configurations.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT41K256M16 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT41K256M16TW-107:P | MT41K256M16RE-125 | K4B4G1646E-BYMA | NT5CC256M16ER-EKI |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Density / Organization | 4 Gbit / 256M x16 | 4 Gbit / 256M x16 | 4 Gbit / 256M x16 | 4 Gbit / 256M x16 | 4 Gbit / 256M x16 |
| Supply Voltage | 1.35 V (DDR3L, 1.5V-compatible) | 1.35 V | 1.35 V | 1.35 V (DDR3L) / 1.5V (DDR3) | 1.35 V (DDR3L) |
| Banks | 8 | 8 | 8 | 8 | 8 |
| Source | Micron authorized distribution (DigiKey ships same day for V00HWC1) | Micron / WIN SOURCE | Micron / Octopart (8 distributors) | Samsung distribution | Nanya / WIN SOURCE cross-ref |
Ключевые отличия
- Broadest FPGA reference-design ecosystem (против K4B4G1646E-BYMA)
- 1.35V DDR3L with 1.5V DDR3 fallback compatibility (против NT5CC256M16ER-EKI)
- Same-footprint speed-grade ladder 1600/1866/2133 MT/s (против MT41K256M16RE-125)
Заметки по проектированию
Use fly-by address/command routing terminated to VTT, and length-match each DQ to its DQS pair within +/-10 mil (0.25 mm) per Micron's DDR3 layout guidance. Keep the MT41K256M16 within 3 inches of the controller at 1600 MT/s; at 1866/2133 MT/s shrink further. Route on inner layers with solid VDDQ reference planes and avoid splitting DQ bytes across reference-plane gaps. Place the single ZQ calibration resistor (240 ohm, 1%) within 0.25 inch of the ZQ ball with a dedicated return path.
Generate VDD and VDDQ from a 1.35V rail with at least 47uF bulk plus distributed 0.1uF ceramics around the FBGA ball field. VTT (0.675V) must source AND sink transient current during read/write toggling - use a synchronous-rectified DDR termination regulator (not a resistive divider), sized per the worst-case read/write pattern current from the Micron IBIS models. Estimated: at 1.35V and typical DDR3L-1600 traffic, plan 150-250 mA average per device plus VTT termination current in your rail budget.
Above 85C ambient, the DDR3L specification requires doubling the refresh rate (tREFI halves), which increases standby current and further heats the die - a feedback risk in sealed enclosures. Estimated: a single 4Gbit device dissipates roughly 0.5-0.9 W under sustained traffic; a 4-layer board with a ground-plane-spreading thermal path is usually sufficient, but verify junction temperature against the datasheet thermal parameters for your airflow condition before finalizing an industrial or dashboard deployment.
Do NOT assume x4/x8 variants are interchangeable: the 4Gbit x4 and x8 dies use a 78-ball FBGA with a different outline than the x16 96-ball FBGA. Also confirm the full ordering MPN (speed grade, package, temperature suffix) matches your memory controller timing table - mixing -125 and -107 grades on one bus forces the whole bus to the slower grade. Subscribe to Micron PCNs, since sourcing data notes estimated EOL windows for some suffixes.
Информация о соответствии
RoHS-compliant, lead-free construction per DigiKey/Micron listings (e.g. MT41K256M16V00HWC1). REACH, halogen-free, and conflict-minerals declarations must be requested per full ordering MPN from Micron compliance portal. ECCN: EAR99 per WIN SOURCE data.
