W634GU6RB12I - 4Gb DDR3L SDRAM x16 800MHz | Winbond
Артикул: W634GU6RB12I ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $6.9 | $690,00 |
| 500 | $6.2 | $3.100,00 |
| 1.000 | $5.6 | $5.600,00 |
W634GU6RB12I Обзор
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a parallel interface with 800MHz clock speed, 20ns row cycle time, and support for industrial temperature grades. The device is RoHS compliant and halogen-free, meeting environmental standards. The 96-ball VFBGA package offers a compact footprint suitable for space-constrained designs.
The W634GU6RB12I utilizes advanced DRAM process technology, providing reliable performance with low power consumption. It supports standard DDR3L features such as on-die termination (ODT), programmable CAS latency, and burst lengths of 8. The industrial temperature grade ensures operation in harsh environments.
Typical applications include industrial automation, networking equipment, embedded computing, and automotive infotainment systems. Its high density and low power make it suitable for memory-intensive tasks in these domains.
When designing with this device, ensure proper decoupling and signal integrity practices are followed, as high-speed memory interfaces require careful PCB layout to minimize noise and reflections.
Аналоги без доработки для W634GU6RB12I — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с W634GU6RB12I (тот же форм-фактор и посадочное место) — отличается по Package, Operating Temperature, Data Rate, CAS Latency, Memory Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
W634GU6RB12J
✅ Прямая замена✓ В наличии
$6 / шт.
Открыть даташит →W634GU6RB-12
✅ Прямая замена✓ В наличии
$9.5 / шт.
Открыть даташит →W634GU6RB11I
✅ Прямая замена✓ В наличии
$1.95 / шт.
Открыть даташит →W634GU6RB-11
✅ Прямая замена✓ В наличии
$13.5227 / шт.
Открыть даташит →W634GU6RB09I
✅ Прямая замена✓ В наличии
$6 / шт.
Открыть даташит →MT41K256M16HA-125IT:E
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$4.5 / шт.
Открыть даташит →IS43TR16256A-125KBL
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$19.0909 / шт.
Открыть даташит →NT5CC256M16DP-DI
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$6.5 / шт.
Открыть даташит →W634GU6RB12I Максимальные параметры и электрические характеристики
| Тип памяти | DDR3L SDRAM |
| Размер памяти | 4Gbit (256M x 16) |
| Скорость передачи данных | 800 MHz (DDR3L-1600) |
| Напряжение питания | 1.35V |
| Row Cycle Time (tRC) | 20 ns |
| Корпус | 96-VFBGA (7.5x13mm) |
| Рабочая температура | -40°C to +95°C (TCASE) |
| Интерфейс | Parallel |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Без галогенов | Yes |
| Speed Grade | -12I (DDR3L-1600 11-11-11) |
| Организация памяти | 256M x 16 |
| Задержка CAS | 11 |
| Burst Length | 8 |
Конфигурация выводов W634GU6RB12I
| Контакт A1 | VDD — Power supply (1.35V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт B1 | DQ2 — Data input/output 2 |
| Контакт B2 | DQ3 — Data input/output 3 |
| Контакт B3 | VDDQ — I/O power supply |
| Контакт B4 | DQ4 — Data input/output 4 |
| Контакт C1 | DQ5 — Data input/output 5 |
| Контакт C2 | DQ6 — Data input/output 6 |
| Контакт C3 | DQ7 — Data input/output 7 |
| Контакт C4 | VSS — Ground |
| Контакт D1 | DQS0 — Data strobe 0 |
| Контакт D2 | DQS0# — Data strobe 0 complement |
| Контакт D3 | VDD — Power supply |
| Контакт D4 | DM0 — Data mask 0 |
Типичное применение
W634GU6RB12I подходит для 6 применениеs: Industrial Automation, Networking Equipment, Embedded Computing, Automotive Infotainment, Medical Devices, Test and Measurement.
Industrial Automation
The W634GU6RB12I provides high-density, low-power memory for industrial controllers and PLCs. Its industrial temperature range (-40°C to +95°C) ensures reliable operation in factory environments. The 800MHz data rate supports fast data processing for real-time control loops, while the 1.35V operation reduces heat generation in sealed enclosures. With 4Gbit capacity, it can store large program and data buffers for complex automation tasks.
Рекомендуется
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB12I offers high bandwidth and low latency for packet buffering and forwarding tables. The DDR3L-1600 speed ensures quick access to routing data, while the 4Gbit density supports large lookup tables. The 1.35V operation is ideal for power-constrained networking devices, and the industrial temperature grade allows deployment in uncontrolled environments like remote telecom cabinets.
Рекомендуется
Embedded Computing
The W634GU6RB12I is suitable for embedded computing modules, single-board computers, and edge AI devices. Its 4Gbit capacity provides ample memory for operating systems and applications, while the 800MHz data rate ensures responsive performance. The compact 96-VFBGA package saves PCB space, and the industrial temperature range supports outdoor and rugged deployments. Low power consumption extends battery life in portable embedded systems.
Рекомендуется
Automotive Infotainment
In automotive infotainment systems, the W634GU6RB12I provides reliable memory for navigation, multimedia, and connectivity features. The industrial temperature range (-40°C to +95°C) meets automotive requirements, and the 1.35V operation reduces power draw from the vehicle's electrical system. The 4Gbit density supports large map databases and media buffers, while the 800MHz speed enables smooth graphics rendering and fast boot times.
Рекомендуется
Medical Devices
The W634GU6RB12I is used in medical imaging, patient monitoring, and diagnostic equipment where reliable memory is critical. Its industrial temperature range ensures operation in clinical environments, and the low power consumption is beneficial for battery-powered portable devices. The 4Gbit capacity supports high-resolution image storage and real-time signal processing, while the 800MHz data rate enables fast data acquisition and analysis.
Рекомендуется
Test and Measurement
In oscilloscopes, logic analyzers, and signal generators, the W634GU6RB12I provides high-speed data buffering for waveform capture and analysis. The 800MHz data rate supports high-bandwidth sampling, while the 4Gbit density allows long recording times. The industrial temperature range ensures accuracy in lab and field environments, and the low power consumption reduces heat in benchtop instruments.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для W634GU6RB12I — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | W634GU6RB12J | W634GU6RB-12 | MT41K256M16HA-125IT:E |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13mm) | 96-VFBGA (7.5x13mm) | 96-VFBGA (7.5x13mm) | 96-FBGA (9x13mm) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Micron Technology |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 800MHz (DDR3L-1600) | 800MHz (DDR3L-1600) | 800MHz (DDR3L-1600) | 800MHz (DDR3L-1600) |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +105°C | 0°C to +85°C | -40°C to +95°C |
| CAS Latency | 11 | 11 | 11 | 11 |
| RoHS Compliant | Yes | Yes | Yes | Yes |
Ключевые отличия
- Industrial temperature range up to +95°C (против W634GU6RB-12)
- DDR3L-1600 speed grade (против W634GU6RB11I)
- Low power 1.35V operation (против MT41K256M16HA-125IT:E)
Заметки по проектированию
For high-speed DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within +/- 20 mils for DQ/DQS groups. Use a solid ground plane beneath the memory device and minimize vias to reduce signal reflections.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor on the VDD rail. Ensure the power supply can handle transient currents during read/write operations, which can exceed 1A.
The industrial temperature grade allows operation up to +95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The VFBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits.
Информация о соответствии
RoHS compliant and halogen-free per Winbond product page. REACH and conflict minerals status not specified in provided data.
