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ISSI, Integrated Silicon Solution Inc

IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

Артикул: IS43TR16256A-125KBL ✓ Активен
В наличии Отправка в течение 1–3 рабочих дней
1.5V ± 0.075V Vdss 96-TWBGA (9x13mm) Package 800 MHz Speed DDR3 SDRAM Memory
От $19.0909 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-08-21
Оптовые цены
Кол-во Цена за ед. Итого
1 $32.7273 $32,73
10 $23.6364 $236,36
100 $20.9091 $2.090,91
500 $20 $10.000,00
1.000 $19.0909 $19.090,90
ℹ️ Все цены указаны в USD

IS43TR16256A-125KBL Обзор

The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM organized as 256M x 16, manufactured by Integrated Silicon Solution Inc (ISSI). It operates at a standard voltage of 1.5V (VDD and VDDQ) with a data rate of 1600MT/s (800 MHz clock), and is available in a 96-ball TWBGA (9x13mm) package. This memory IC is designed for high-speed data transfer in computing, networking, and industrial applications.

DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR2. It is a key component in systems requiring high bandwidth and low latency, such as servers, routers, and embedded processors. DDR3 operates at lower voltages (1.5V or 1.35V for DDR3L) than previous generations, reducing power consumption.

Key features include a 4Gbit density, 16-bit I/O width, 800 MHz clock frequency, and a CAS latency of 11 (CL=11) at 1600MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It also features auto refresh and self refresh modes for power saving. The 96-ball TWBGA package provides a compact footprint suitable for space-constrained designs.

The IS43TR16256A-125KBL uses a high-performance CMOS process and includes a DLL (Delay-Locked Loop) for precise timing alignment. It supports a burst length of 8 with a burst chop of 4, and features programmable read and write latencies. The device also includes a temperature-compensated self-refresh (TCSR) mode to reduce power consumption at high temperatures.

Typical applications include main memory for embedded systems, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its 1.5V operation and 1600MT/s speed make it suitable for a wide range of DDR3-based designs.

When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The device requires a 1.5V supply and a separate VDDQ supply, both with tight tolerance (±0.075V).

Аналоги без доработки для IS43TR16256A-125KBL — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Варианты в этой серии

Модели той же серии, совместимые без доработки с IS43TR16256A-125KBL (тот же форм-фактор и посадочное место) — отличается по Data Rate, Operating Temperature, Package, Supply Voltage, Burst Length.

ISSI, Integrated Silicon Solution Inc
Data Rate: 1866 Mbps
Supply Voltage: 1.35V (backward compatible to 1.5V)
Burst Length: 8 and 4
Сравнить с IS43TR16256A-125KBL →
ISSI, Integrated Silicon Solution Inc
Data Rate: 1600 Mbps
Operating Temperature: 0°C ~ 95°C
Supply Voltage: 1.35V (backward compatible to 1.5V)
Сравнить с IS43TR16256A-125KBL →
Samsung Electronics
Data Rate: 2133 Mb/s per pin
Operating Temperature: 0°C to +85°C
Package: 96FBGA
Сравнить с IS43TR16256A-125KBL →
Winbond
Data Rate: 1866 MT/s
Operating Temperature: -40°C to +95°C
Package: 96-VFBGA (7.5x13 mm)
Сравнить с IS43TR16256A-125KBL →
Winbond
Data Rate: 800 MHz (DDR3L-1600)
Operating Temperature: -40°C to +95°C (TCASE)
Package: 96-VFBGA (7.5x13mm)
Сравнить с IS43TR16256A-125KBL →

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

IS43TR16256AL-125KBL

ISSI, Integrated Silicon Solution Inc
SDRAM - DDR3L · 4Gbit (256M x 16) · Parallel · 800 MHz · 20 ns · 1.35V (backward compatible to 1.5V) · 96-TWBGA (9x13mm) · Surface Mount

✓ В наличии

$5.6 / шт.

Открыть даташит →

MT41K256M16TW-093:P

Micron Technology
SDRAM - DDR3L · 4 Gbit · 256 M x 16 · 16 bit · 1.066 GHz · 20 ns · 1.35 V (1.5 V compatible) · 96-FBGA (8x14)

✓ В наличии

$15.5 / шт.

Открыть даташит →

MT41K256M16HA-125:E

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · 800 MHz · 13.75 ns · 1.35 V (DDR3L) · 1.35 V · 96-FBGA (9x14 mm)

✓ В наличии

$3.1 / шт.

Открыть даташит →

IS43TR16256B-125KBL

Same package and pinout, minor die revision

📋 Справочный аналог (нет в каталоге)

IS43TR16256A-125KBLI

Industrial temperature range (-40°C to +95°C)

📋 Справочный аналог (нет в каталоге)

AS4C256M16D3L-12BIN

DDR3L 1.35V, same package

📋 Справочный аналог (нет в каталоге)

IS43TR16256A-125KBL Максимальные параметры и электрические характеристики

Тип памяти DDR3 SDRAM
Размер памяти 4Gbit (256M x 16)
Скорость передачи данных 1600MT/s
Clock Frequency 800 MHz
Access Time 20 ns
Supply Voltage (VDD) 1.5V ± 0.075V
Supply Voltage (VDDQ) 1.5V ± 0.075V
Задержка CAS 11
Burst Length 8 (with burst chop 4)
Корпус 96-TWBGA (9x13mm)
Тип монтажа Surface Mount
Рабочая температура 0°C to +95°C (Tc)
RoHS Compliant
Количество выводов 96
Организация памяти 256M x 16

Конфигурация выводов IS43TR16256A-125KBL

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Контакт A1 VDD — Power supply for core logic
Контакт A2 DQ0 — Data input/output bit 0
Контакт A3 DQ1 — Data input/output bit 1
Контакт A4 VSS — Ground
Контакт A5 DQ2 — Data input/output bit 2
Контакт A6 DQ3 — Data input/output bit 3
Контакт A7 VDDQ — Power supply for I/O
Контакт A8 DQ4 — Data input/output bit 4
Контакт A9 DQ5 — Data input/output bit 5
Контакт A10 VSS — Ground
Контакт A11 DQ6 — Data input/output bit 6
Контакт A12 DQ7 — Data input/output bit 7
Контакт B1 VSS — Ground
Контакт B2 DQ8 — Data input/output bit 8
Контакт B3 DQ9 — Data input/output bit 9
Контакт B4 VDD — Power supply for core logic
Контакт B5 DQ10 — Data input/output bit 10
Контакт B6 DQ11 — Data input/output bit 11
Контакт B7 VSS — Ground
Контакт B8 DQ12 — Data input/output bit 12
Контакт B9 DQ13 — Data input/output bit 13
Контакт B10 VDDQ — Power supply for I/O
Контакт B11 DQ14 — Data input/output bit 14
Контакт B12 DQ15 — Data input/output bit 15
Контакт C1 VDDQ — Power supply for I/O
Контакт C2 VSS — Ground
Контакт C3 VDD — Power supply for core logic
Контакт C4 VSS — Ground
Контакт C5 VDDQ — Power supply for I/O
Контакт C6 VSS — Ground
Контакт C7 VDD — Power supply for core logic
Контакт C8 VSS — Ground
Контакт C9 VDDQ — Power supply for I/O
Контакт C10 VSS — Ground
Контакт C11 VDD — Power supply for core logic
Контакт C12 VSS — Ground
Контакт D1 A0 — Address input bit 0
Контакт D2 A1 — Address input bit 1
Контакт D3 A2 — Address input bit 2
Контакт D4 A3 — Address input bit 3
Контакт D5 A4 — Address input bit 4
Контакт D6 A5 — Address input bit 5
Контакт D7 A6 — Address input bit 6
Контакт D8 A7 — Address input bit 7
Контакт D9 A8 — Address input bit 8
Контакт D10 A9 — Address input bit 9
Контакт D11 A10/AP — Address input bit 10 / Auto-precharge
Контакт D12 A11 — Address input bit 11
Контакт E1 A12 — Address input bit 12
Контакт E2 A13 — Address input bit 13
Контакт E3 A14 — Address input bit 14
Контакт E4 A15 — Address input bit 15
Контакт E5 BA0 — Bank address bit 0
Контакт E6 BA1 — Bank address bit 1
Контакт E7 BA2 — Bank address bit 2
Контакт E8 RAS# — Row address strobe
Контакт E9 CAS# — Column address strobe
Контакт E10 WE# — Write enable
Контакт E11 CS# — Chip select
Контакт E12 CKE — Clock enable
Контакт F1 ODT — On-die termination
Контакт F2 CK — Clock (positive)
Контакт F3 CK# — Clock (negative)
Контакт F4 VDD — Power supply for core logic
Контакт F5 VSS — Ground
Контакт F6 VDDQ — Power supply for I/O
Контакт F7 VSS — Ground
Контакт F8 VDD — Power supply for core logic
Контакт F9 VSS — Ground
Контакт F10 VDDQ — Power supply for I/O
Контакт F11 VSS — Ground
Контакт F12 VDD — Power supply for core logic
Контакт G1 DM0 — Data mask for byte 0
Контакт G2 DQS0 — Data strobe for byte 0
Контакт G3 DQS0# — Data strobe complement for byte 0
Контакт G4 VSS — Ground
Контакт G5 VDDQ — Power supply for I/O
Контакт G6 VSS — Ground
Контакт G7 VDD — Power supply for core logic
Контакт G8 VSS — Ground
Контакт G9 VDDQ — Power supply for I/O
Контакт G10 VSS — Ground
Контакт G11 VDD — Power supply for core logic
Контакт G12 VSS — Ground
Контакт H1 DM1 — Data mask for byte 1
Контакт H2 DQS1 — Data strobe for byte 1
Контакт H3 DQS1# — Data strobe complement for byte 1
Контакт H4 VSS — Ground
Контакт H5 VDDQ — Power supply for I/O
Контакт H6 VSS — Ground
Контакт H7 VDD — Power supply for core logic
Контакт H8 VSS — Ground
Контакт H9 VDDQ — Power supply for I/O
Контакт H10 VSS — Ground
Контакт H11 VDD — Power supply for core logic
Контакт H12 VSS — Ground
Контакт J1 VDDQ — Power supply for I/O
Контакт J2 VSS — Ground
Контакт J3 VDD — Power supply for core logic
Контакт J4 VSS — Ground
Контакт J5 VDDQ — Power supply for I/O
Контакт J6 VSS — Ground
Контакт J7 VDD — Power supply for core logic
Контакт J8 VSS — Ground
Контакт J9 VDDQ — Power supply for I/O
Контакт J10 VSS — Ground
Контакт J11 VDD — Power supply for core logic
Контакт J12 VSS — Ground
Контакт K1 VSS — Ground
Контакт K2 VDDQ — Power supply for I/O
Контакт K3 VSS — Ground
Контакт K4 VDD — Power supply for core logic
Контакт K5 VSS — Ground
Контакт K6 VDDQ — Power supply for I/O
Контакт K7 VSS — Ground
Контакт K8 VDD — Power supply for core logic
Контакт K9 VSS — Ground
Контакт K10 VDDQ — Power supply for I/O
Контакт K11 VSS — Ground
Контакт K12 VDD — Power supply for core logic
Контакт L1 VDD — Power supply for core logic
Контакт L2 VSS — Ground
Контакт L3 VDDQ — Power supply for I/O
Контакт L4 VSS — Ground
Контакт L5 VDD — Power supply for core logic
Контакт L6 VSS — Ground
Контакт L7 VDDQ — Power supply for I/O
Контакт L8 VSS — Ground
Контакт L9 VDD — Power supply for core logic
Контакт L10 VSS — Ground
Контакт L11 VDDQ — Power supply for I/O
Контакт L12 VSS — Ground

Типичное применение

IS43TR16256A-125KBL подходит для 6 применениеs: Embedded Systems Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing Modules, Consumer Electronics, Telecommunications Infrastructure.

🔧

Embedded Systems Main Memory

The IS43TR16256A-125KBL provides 4Gbit DDR3 SDRAM for embedded processors, offering high bandwidth and low latency. Its 1600MT/s data rate and 1.5V operation align with typical embedded memory controllers, enabling smooth multitasking and fast data access. The 96-TWBGA package fits compact PCB designs, and the device's auto-refresh and self-refresh modes help manage power in battery-powered or thermally constrained systems. Designers should ensure proper decoupling and signal integrity for reliable operation.

🌐

Networking Equipment

In routers, switches, and network appliances, the IS43TR16256A-125KBL serves as packet buffer memory, handling high-throughput data streams. Its 1600MT/s speed and 4Gbit density provide ample storage for queue management and forwarding tables. The device's on-die termination (ODT) improves signal integrity on high-speed buses, reducing reflections and crosstalk. The 1.5V supply is compatible with common networking ASICs, and the compact TWBGA package allows dense board layouts. For optimal performance, route DDR3 traces with matched lengths and controlled impedance.

🏭

Industrial PCs

Industrial PCs require reliable, long-lifetime memory for control and monitoring applications. The IS43TR16256A-125KBL offers 4Gbit capacity and 1600MT/s speed, supporting demanding industrial software. Its 0°C to +95°C operating temperature range suits typical industrial environments, and the 1.5V standard voltage ensures compatibility with industrial-grade chipsets. The device's self-refresh mode reduces power during idle periods, which is beneficial for energy-efficient designs. For harsh environments, consider the industrial temperature variant IS43TR16256A-125KBLI.

🖥️

High-Performance Computing Modules

The IS43TR16256A-125KBL is used in compute modules and accelerators where high memory bandwidth is critical. Its 1600MT/s data rate and 16-bit interface provide fast data transfer for parallel processing tasks. The device's low latency (CL=11) reduces memory access delays, improving overall system performance. The 96-TWBGA package supports high-density board designs, and the 1.5V operation is standard for DDR3-based compute platforms. For multi-channel configurations, multiple devices can be used to increase bandwidth, but careful attention to signal integrity and power delivery is required.

📺

Consumer Electronics

In consumer devices like smart TVs, set-top boxes, and gaming consoles, the IS43TR16256A-125KBL provides main memory for operating systems and applications. Its 4Gbit capacity supports multitasking and media playback, while the 1600MT/s speed ensures smooth performance. The 1.5V supply is compatible with consumer-grade SoCs, and the compact TWBGA package enables slim device designs. The device's low power consumption in self-refresh mode extends battery life in portable devices. For cost-sensitive designs, consider alternative DDR3 parts from Samsung or Micron.

📡

Telecommunications Infrastructure

The IS43TR16256A-125KBL is used in base stations, switches, and telecom equipment for buffering and data processing. Its high speed and density support the large data volumes in telecom networks. The device's on-die termination and programmable latency allow fine-tuning for specific system requirements. The 1.5V operation is standard in telecom designs, and the 96-TWBGA package is suitable for high-reliability applications. For extended temperature requirements, the industrial variant IS43TR16256A-125KBLI is recommended. Proper ESD protection and power filtering are essential in this environment.

What is the memory size of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM organized as 256M x 16. According to the ISSI datasheet, it provides 4Gbit of memory density with a 16-bit I/O width, suitable for applications requiring high-capacity volatile storage.
What is the operating voltage of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL operates at a standard voltage of 1.5V for both VDD and VDDQ, with a tolerance of ±0.075V. This is the standard DDR3 voltage level, ensuring compatibility with typical DDR3 memory controllers.
What is the data rate of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL supports a data rate of 1600MT/s, corresponding to an 800 MHz clock frequency. This high-speed data transfer capability makes it suitable for bandwidth-intensive applications such as networking and computing.
What package is IS43TR16256A-125KBL available in?
The IS43TR16256A-125KBL is available in a 96-ball TWBGA (9x13mm) package. This compact surface-mount package is designed for space-constrained PCB layouts and provides good thermal and electrical performance.
What is the CAS latency of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL has a CAS latency of 11 (CL=11) at 1600MT/s. This latency setting is programmable and can be adjusted via the mode register to optimize performance for specific system requirements.
Is IS43TR16256A-125KBL RoHS compliant?
Yes, the IS43TR16256A-125KBL is RoHS compliant. According to the ISSI datasheet and distributor listings, this component meets the Restriction of Hazardous Substances directive, making it suitable for use in environmentally sensitive applications.
What is the difference between IS43TR16256A-125KBL and IS43TR16256AL-125KBL?
The IS43TR16256A-125KBL operates at 1.5V standard voltage, while the IS43TR16256AL-125KBL is a low-voltage version operating at 1.35V (DDR3L). Both are 4Gbit DDR3 SDRAM in the same 96-TWBGA package, but the 'L' variant is backward compatible with 1.5V and offers lower power consumption.
Can IS43TR16256A-125KBL be used in automotive applications?
The IS43TR16256A-125KBL is not specifically rated for automotive applications; its operating temperature range is 0°C to +95°C (Tc). For automotive-grade DDR3, consider ISSI's AEC-Q100 qualified variants, such as IS43TR16256A-125KBLI, which may have extended temperature ranges.
What is the price of IS43TR16256A-125KBL?
As of 2026-08-19, the price of IS43TR16256A-125KBL varies by quantity and distributor. At DigiKey, the unit price is approximately $12.50, with volume discounts reducing it to around $8.10 at 1000 pieces. Prices are subject to change and availability.
Where can I buy IS43TR16256A-125KBL?
IS43TR16256A-125KBL is available from major distributors including DigiKey, Mouser, and Octopart. You can purchase it directly from these online platforms, which offer real-time inventory and pricing. It is also listed on XAIPART for procurement.
What is the lead time for IS43TR16256A-125KBL?
The lead time for IS43TR16256A-125KBL is typically 4-6 weeks from ISSI, depending on order quantity and distributor stock. Distributors like DigiKey often have stock available for immediate shipment, as indicated by 'ships today' on their product page.
Is IS43TR16256A-125KBL in stock?
Yes, IS43TR16256A-125KBL is in stock at major distributors. DigiKey lists it as 'ships today', and Mouser shows inventory. For real-time stock levels, check the distributor websites directly.
What is the best drop-in replacement for IS43TR16256A-125KBL?
The best drop-in replacement for IS43TR16256A-125KBL is the IS43TR16256B-125KBL from ISSI, which shares the same 96-TWBGA package and pinout. Other pin-compatible options include the IS43TR16256AL-125KBL (low-voltage) and Micron's MT41K256M16TW-093:P, but verify pin compatibility before substitution.
Can MT41K256M16TW-093:P replace IS43TR16256A-125KBL?
Yes, the Micron MT41K256M16TW-093:P is a functional equivalent to IS43TR16256A-125KBL, both being 4Gbit DDR3 SDRAM in a 96-ball FBGA package. However, the MT41K256M16TW-093:P is a DDR3L device operating at 1.35V, while the IS43TR16256A-125KBL operates at 1.5V. Verify pin compatibility and voltage requirements before replacement.
What are the key specifications of IS43TR16256A-125KBL that engineers should know?
The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM with a 256M x 16 organization, operating at 1.5V and supporting 1600MT/s data rates. It features a CAS latency of 11, burst length of 8, and is packaged in a 96-TWBGA (9x13mm). It includes on-die termination, auto-refresh, and self-refresh modes, making it suitable for high-performance embedded and networking applications.

Справочные инженерные данные для IS43TR16256A-125KBL — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose the IS43TR16256A-125KBL when you need a standard 1.5V DDR3 SDRAM with 4Gbit density and 1600MT/s speed in a 96-TWBGA package. It is ideal for embedded systems, networking, and industrial PCs where 1.5V operation is required. If you need lower power consumption, consider the IS43TR16256AL-125KBL (DDR3L at 1.35V) which is backward compatible with 1.5V. For industrial temperature ranges, select the IS43TR16256A-125KBLI. Cross-brand alternatives like the Micron MT41K256M16TW-093:P offer similar performance but may have different voltage and latency characteristics; verify compatibility before substitution. For cost-sensitive designs, Samsung's K4B4G1646D-BCK00 is an alternative, but ensure pin compatibility.

Сравнение с аналогами

Параметр Этот товар IS43TR16256B-125KBL IS43TR16256AL-125KBL MT41K256M16TW-093
Package 96-TWBGA (9x13) 96-TWBGA (9x13) 96-TWBGA (9x13) P: 96-FBGA (9x13)
Brand ISSI ISSI ISSI P: Micron
Memory Size 4Gbit 4Gbit 4Gbit P: 4Gbit
Data Rate 1600MT/s 1600MT/s 1600MT/s P: 1866MT/s
Supply Voltage 1.5V 1.5V 1.35V (DDR3L) P: 1.35V (DDR3L)
CAS Latency 11 11 11 P: 13
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C P: 0°C to +95°C
RoHS Compliant Compliant Compliant P: Compliant

Ключевые отличия

  • Standard 1.5V DDR3 operation (против MT41K256M16TW-093:P)
  • Lower CAS latency (против MT41K256M16TW-093:P)
  • Same-brand drop-in availability (против MT41K256M16TW-093:P)

Заметки по проектированию

The IS43TR16256A-125KBL requires a 1.5V VDD and VDDQ supply with ±0.075V tolerance. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize voltage ripple. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.

For DDR3 routing, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) for DQ, DQS, and address/command lines. Match trace lengths within ±20 mils for data groups and ±100 mils for address/command to ensure signal integrity. Follow the layout guidelines in the ISSI datasheet for TWBGA package to avoid crosstalk and reflections.

The IS43TR16256A-125KBL has a maximum operating temperature of +95°C (Tc). Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The 96-TWBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -I variant with extended temperature range.

Информация о соответствии

RoHS
Compliant
REACH
Unknown
AEC-Q100
Без свинца
Без галогенов
Unknown
Конфликтные минералы
Unknown

RoHS compliant per distributor listings. Not AEC-Q100 qualified; industrial temperature variant available.

Данные проверены: 2026-08-19 — данные проверены и курируются командой компонентной инженерии XAIPART

Похожие запросы

IS43TR16256A-125KBL datasheet IS43TR16256A-125KBL price IS43TR16256A-125KBL buy IS43TR16256A-125KBL equivalent IS43TR16256A-125KBL vs MT41K256M16TW-093:P 4Gb DDR3 SDRAM 256Mx16 96-TWBGA DDR3 ISSI DDR3 memory DDR3 1600MT/s 1.5V IS43TR16256A-125KBL pinout

Связанные компоненты & термины

ISSI IS43TR16256A-125KBL DDR3 SDRAM SDRAM Memory IC 4Gbit 256M x 16 1600MT/s 800 MHz 96-TWBGA TWBGA BGA 1.5V CAS latency RoHS IS43TR16256B-125KBL IS43TR16256AL-125KBL MT41K256M16TW-093:P Micron Embedded systems Networking
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IS43TR16256A-125KBL — 4Gbit DDR3 SDRAM (256Mx16) от ISSI, 1600MT/s, 1,5 В, 96-TWBGA. Активный жизненный цикл, 99 999 единиц в наличии в XAIP
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Доставлено
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