1EBN1001AEXUMA1 vs 2EDL8034G4CXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EBN1001AEXUMA1 sa pamamagitan ng Infineon at 2EDL8034G4CXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 1EBN1001AEXUMA1 2EDL8034G4CXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Non-Inverting
Bilang ng Outputs 2 (separate source and sink paths) 2
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
Packhaging PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-VDSON-10-2 (DSN-10) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -40 °C to +125 °C (automotive grade) —
Automotive Qualification AEC-Q100 qualified —
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Driver Type — Half-Bridge (High-Side / Low-Side)
Bootstrap Voltage (Max) — 120 V
Peak Source Current — 3 A
Peak Sink Current — 4 A
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Temperature ng Junction na Operasyon — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

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