1EBN1001AEXUMA1 vs 2EDL8034G4CXTMA1 比較

詳細並排比較 1EBN1001AEXUMA1 由 Infineon 與 2EDL8034G4CXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ 啟用中

規格比較

參數 1EBN1001AEXUMA1 2EDL8034G4CXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) Non-Inverting
輸出數量 2 (separate source and sink paths) 2
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
封裝 PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-VDSON-10-2 (DSN-10) with exposed pad
安裝類型 Surface Mount Surface Mount
工作溫度 -40 °C to +125 °C (automotive grade) —
Automotive Qualification AEC-Q100 qualified —
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Driver Type — Half-Bridge (High-Side / Low-Side)
Bootstrap Voltage (Max) — 120 V
Peak Source Current — 3 A
Peak Sink Current — 4 A
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility — 3.3 V / 5 V
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
Isolation Type — Junction-isolated (level-shifted)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
工作接面溫度 — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

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