1ED3142MC12HXUMA1 vs 1ED3124MC12HXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3142MC12HXUMA1 sa pamamagitan ng Infineon at 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ NakahandaInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED3142MC12HXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | 1ED3142MC12HXUMA1 | — |
| Product Family | EiceDRIVER X3 Compact | — |
| Driver Type | Isolated single-channel gate driver | — |
| Isolation Technology | Coreless transformer (galvanic) | Magnetic coupling (coreless transformer) |
| Isolation Voltage | 3000 Vrms | — |
| Number of Channels | 1 | — |
| Bilang ng Outputs | 2 (separate source/sink) | 1 |
| Configuration | Inverting, Non-Inverting | High-side / Low-side (non-inverting) |
| Source Drive Current | 6 A | — |
| Sink Drive Current | 6.5 A | — |
| Maximum Rise Time | 20 ns | — |
| Maximum Fall Time | 20 ns | — |
| Propagation Delay (typ.) | 40 ns | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET | — |
| Packhaging | PG-DSO-8 (PG-LDSO-8-1) | PG-DSO-8 (DSO-8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| EU RoHS | Compliant | — |
| Part Status | Active | — |
| ECCN | EAR99 | — |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Oras ng Pagtaas | — | 15 ns |
| Time ng Pagbaba | — | 30 ns |
| Temperature na Operasyon | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |
| Tindminan RoHS | — | Compliant |