1ED3142MC12HXUMA1 vs 2EP101RXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3142MC12HXUMA1 sa pamamagitan ng Infineon at 2EP101RXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1ED3142MC12HXUMA1 2EP101RXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number 1ED3142MC12HXUMA1 —
Product Family EiceDRIVER X3 Compact —
Driver Type Isolated single-channel gate driver —
Isolation Technology Coreless transformer (galvanic) —
Isolation Voltage 3000 Vrms —
Number of Channels 1 —
Bilang ng Outputs 2 (separate source/sink) 1 (full-bridge differential primary)
Configuration Inverting, Non-Inverting —
Source Drive Current 6 A —
Sink Drive Current 6.5 A —
Maximum Rise Time 20 ns —
Maximum Fall Time 20 ns —
Propagation Delay (typ.) 40 ns —
Supported Switches IGBT, MOSFET, SiC MOSFET —
Packhaging PG-DSO-8 (PG-LDSO-8-1) PG-TSSOP-8
Uri ng Pagpapasok Surface Mount Surface Mount
EU RoHS Compliant —
Part Status Active —
ECCN EAR99 —
Product Type — Full-Bridge Transformer Driver PMIC
Topolohiya — Full-bridge (H-bridge) with external transformer
Supply Voltage Range — 5 V to 20 V
Maximum Output Power — 5 W
Switching Frequency Option 1 — 50 kHz
Switching Frequency Option 2 — 65 kHz
Duty Cycle Option 1 — 12%
Duty Cycle Option 2 — 17%
Hanay ng Temperature na Operasyon — -40 °C to +125 °C
Primary Application — Isolated IGBT and SiC MOSFET gate driver supply
RoHS Compliance — Compliant
Delivery Form — Tape and Reel (XT suffix)

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