1ED3142MC12HXUMA1 vs 2EP101RXTMA1 比較

詳細並排比較 1ED3142MC12HXUMA1 由 Infineon 與 2EP101RXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1ED3142MC12HXUMA1 2EP101RXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number 1ED3142MC12HXUMA1 —
Product Family EiceDRIVER X3 Compact —
Driver Type Isolated single-channel gate driver —
Isolation Technology Coreless transformer (galvanic) —
Isolation Voltage 3000 Vrms —
Number of Channels 1 —
輸出數量 2 (separate source/sink) 1 (full-bridge differential primary)
Configuration Inverting, Non-Inverting —
Source Drive Current 6 A —
Sink Drive Current 6.5 A —
Maximum Rise Time 20 ns —
Maximum Fall Time 20 ns —
Propagation Delay (typ.) 40 ns —
Supported Switches IGBT, MOSFET, SiC MOSFET —
封裝 PG-DSO-8 (PG-LDSO-8-1) PG-TSSOP-8
安裝類型 Surface Mount Surface Mount
EU RoHS Compliant —
Part Status Active —
ECCN EAR99 —
Product Type — Full-Bridge Transformer Driver PMIC
拓撲 — Full-bridge (H-bridge) with external transformer
Supply Voltage Range — 5 V to 20 V
Maximum Output Power — 5 W
Switching Frequency Option 1 — 50 kHz
Switching Frequency Option 2 — 65 kHz
Duty Cycle Option 1 — 12%
Duty Cycle Option 2 — 17%
工作溫度範圍 — -40 °C to +125 °C
Primary Application — Isolated IGBT and SiC MOSFET gate driver supply
RoHS Compliance — Compliant
Delivery Form — Tape and Reel (XT suffix)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價