1ED3142MU12FXUMA1 vs 2ED21064S06JXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3142MU12FXUMA1 sa pamamagitan ng Infineon at 2ED21064S06JXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
1ED3142MU12FXUMA1 ✓ NakahandaInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED3142MU12FXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Galvanically Isolated Gate Driver IC | — |
| Number of Channels | 1 | — |
| Peak Source/Sink Output Current | 6.5 A (typical) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | — |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | — |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | — |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | — |
| Propagation Delay (typical) | 42 ns | 100 ns |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | — |
| Packhaging | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-14 (14-pin SOIC) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: junction/ambient range] | — |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | — |
| Output Stage | Separate source/sink pins, totem-pole | — |
| Tindminan RoHS | Compliant | ROHS3 Compliant |
| Family | Infineon EiceDRIVER 1ED31xx | — |
| Fungsi | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Topolohiya | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperature na Operasyon | — | -40C to +125C |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Negative Gate Drive Robustness | — | -0.7 V |