1ED3142MU12FXUMA1 vs 2ED21064S06JXUMA1 比較
詳細並排比較 1ED3142MU12FXUMA1 由 Infineon 與 2ED21064S06JXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1ED3142MU12FXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Galvanically Isolated Gate Driver IC | — |
| Number of Channels | 1 | — |
| Peak Source/Sink Output Current | 6.5 A (typical) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | — |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | — |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | — |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | — |
| Propagation Delay (typical) | 42 ns | 100 ns |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | — |
| 封裝 | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-14 (14-pin SOIC) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: junction/ambient range] | — |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | — |
| Output Stage | Separate source/sink pins, totem-pole | — |
| RoHS 狀態 | Compliant | ROHS3 Compliant |
| Family | Infineon EiceDRIVER 1ED31xx | — |
| 功能 | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| 拓撲 | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| 工作溫度 | — | -40C to +125C |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |
| Negative Gate Drive Robustness | — | -0.7 V |