BAT42-TR vs 1N5711 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT42-TR sa pamamagitan ng Vishay Intertechnology at 1N5711 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Vishay Intertechnology
BAT42-TR - 30V 200mA Small Signal Schottky Diode | Vishay
BAT42-TR ✓ NakahandaSTMicroelectronics
1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
1N5711 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT42-TR | 1N5711 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small Signal Schottky Diode | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at specified test current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Current (IR) | [DATA_NEEDED: reverse current at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| Reverse Recovery | Fast switching (low charge, Schottky) | — |
| ESD Protection | PN junction guard ring | — |
| Application Class | General purpose | — |
| Automotive Qualification | AEC-Q101 qualified version available on request | — |
| Packhaging | DO-204AH (DO-35), axial through-hole glass | DO-35 (DO-204AH) hermetic axial-lead glass |
| Uri ng Pagpapasok | Through Hole | Through-Hole |
| Packaging | Tape and Reel (TR suffix) | — |
| Halogen Free / RoHS | Halogen free and RoHS compliant package per cross-reference data | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Related Package Variant | Also available in SOD-123 (BAT42W) and MiniMELF types per datasheet | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |
| Tindminan RoHS | — | Compliant |