BSC014N04LSATMA1 vs BSC035N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC014N04LSATMA1 sa pamamagitan ng Infineon at BSC035N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 ✓ NakahandaInfineon
BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
BSC035N04LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC014N04LSATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| RDS(on) Max at VGS=10V | — | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | — | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | — | 69 W |
| Temperature ng Junction na Operasyon | — | -55°C to +150°C |
| Lead-Free | — | Yes |