BSC014N04LSIATMA1 vs BSC010NE2LSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC014N04LSIATMA1 sa pamamagitan ng Infineon at BSC010NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Nakahanda
Infineon
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon

BSC010NE2LSIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC014N04LSIATMA1 BSC010NE2LSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (trench, thin-wafer) OptiMOS (Trench)
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, Ta) 31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
RDS(on) max at VGS=10 V 1.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (PD, Tc) 96 W —
Power Dissipation (PD, Ta) 2.5 W —
Hanay ng Temperature na Operasyon -55 C to +150 C -55C to +150C (TJ)
Packhaging PG-TDSON-8 FL (TDSON-8 with exposed drain pad) PG-TDSON-8-7 (TDSON-8 EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Tradename OptiMOS —
Manufacturer — Infineon Technologies
Series / Family — OptiMOS 25V
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA — 38 A
Continuous Drain Current (ID) at TC — 100 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 96 W
Configuration — Single N-Channel
Bilang ng Pin — 8
Gate Drive — Logic-level compatible
Rds(on) at 10V — [DATA_NEEDED: Rds(on) at VGS=10V]
Rds(on) at 4.5V — [DATA_NEEDED: Rds(on) at VGS=4.5V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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