BSC014N04LSIATMA1 vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC014N04LSIATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.92 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc) | 100 A | β |
| Continuous Drain Current (ID, Ta) | 31 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | β |
| RDS(on) max at VGS=10 V | 1.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (PD, Tc) | 96 W | β |
| Power Dissipation (PD, Ta) | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (TJ) |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Tradename | OptiMOS | β |
| Manufacturer | β | Infineon Technologies |
| Series / Family | β | OptiMOS 25V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 96 W |
| Configuration | β | Single N-Channel |
| Pin Count | β | 8 |
| Gate Drive | β | Logic-level compatible |
| Rds(on) at 10V | β | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | β | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |