BSC019N08NS5ATMA1 vs BSC019N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N08NS5ATMA1 sa pamamagitan ng Infineon at BSC019N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ NakahandaInfineon
BSC019N06NSATMA1 - 60V 100A 1.95mΩ OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC019N08NS5ATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TA=25C | 28 A | 100 A |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | -55C to +150C (junction) |
| Packhaging | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Part Number | — | BSC019N06NSATMA1 |
| Technology / Family | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| On-State Resistance RDS(on) Max @ VGS=10V | — | 1.95 mΩ (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (PD) at TA=25C | — | 136 W |
| Channel Type | — | N-Channel Enhancement Mode |
| Lead-Free | — | Yes |