BSC023N08NS5SCATMA1 vs IPB020N10N5LFATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC023N08NS5SCATMA1 sa pamamagitan ng Infineon at IPB020N10N5LFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ NakahandaInfineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC023N08NS5SCATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | N-Channel Enhancement-Mode Power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Power Dissipation (PD, Tc=25°C) | 188 W | — |
| On-State Resistance RDS(on) typ. | 2.3 mΩ at VGS=10 V, ID=50 A | — |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | — |
| Total Gate Charge Qg | 98 nC at VGS=10 V | — |
| Input Capacitance Ciss | 6.8 nF | — |
| Output Capacitance Coss | 74 pF | — |
| Thermal Resistance RthJC | 0.72 K/W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-WSON-8-2 (SuperSO8 DSC) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 Linear FET |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (Tc) | — | 176 A |
| Silicon-Limited Drain Current | — | 289 A |
| Package-Limited Drain Current | — | 120 A |
| Pulsed Drain Current (VDS=56V, tp=10ms) | — | 10.2 A |
| On-State Resistance RDS(on) max | — | 2.0 mΩ |
| Total Power Dissipation (Tc) | — | 313 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Level ng MSL | — | 1 |
| Marking Code | — | 020N10LF |