BSC035N04LSGATMA1 vs BSC0911NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC035N04LSGATMA1 sa pamamagitan ng Infineon at BSC0911NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0911NDATMA1 BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC035N04LSGATMA1 BSC0911NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Ta=25°C 21 A —
RDS(on) Max at VGS=10V 3.5 mΩ —
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) —
Power Dissipation (Pd) at Ta=25°C 2.5 W —
Power Dissipation (Pd) at Tc=25°C 69 W —
Temperature ng Junction na Operasyon -55°C to +150°C —
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging PG-TDSON-8-1 (8-pin, exposed drain pad) PG-TISON-8 (8-PowerTDFN)
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Product Family — OptiMOS 25V
Configuration — Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) — 18 A
Pulsed Drain Current (IDM) — 30 A
Power Dissipation (PD) — 1 W
Temperature na Operasyon — -55C to +150C (junction)
Channel Type — N-Channel Enhancement Mode
Technology — OptiMOS trench MOSFET
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Level ng MSL — [DATA_NEEDED: MSL rating]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita