BSC035N04LSGATMA1 vs BSC0911NDATMA1 Comparison

Detailed side-by-side comparison of BSC035N04LSGATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active
Infineon
BSC0911NDATMA1

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 βœ“ Active

Specification Comparison

Parameter BSC035N04LSGATMA1 BSC0911NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 25 V
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Ta=25Β°C 21 A β€”
RDS(on) Max at VGS=10V 3.5 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) β€”
Power Dissipation (Pd) at Ta=25Β°C 2.5 W β€”
Power Dissipation (Pd) at Tc=25Β°C 69 W β€”
Operating Junction Temperature -55Β°C to +150Β°C β€”
Mounting Type Surface Mount Surface Mount
Package PG-TDSON-8-1 (8-pin, exposed drain pad) PG-TISON-8 (8-PowerTDFN)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Product Family β€” OptiMOS 25V
Configuration β€” Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) β€” 18 A
Pulsed Drain Current (IDM) β€” 30 A
Power Dissipation (PD) β€” 1 W
Operating Temperature β€” -55C to +150C (junction)
Channel Type β€” N-Channel Enhancement Mode
Technology β€” OptiMOS trench MOSFET
Gate Threshold (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V β€” [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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