BSC050N03LSGATMA1 vs BSZ065N03LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC050N03LSGATMA1 sa pamamagitan ng Infineon at BSZ065N03LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC050N03LSGATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | Trench MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Packhaging | PG-TDSON-8-5 (SuperSO8 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | -55C to +150C (junction) |
| Channel Type | N-Channel | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 |
| Series | — | OptiMOS 30V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Packhaging / Kaso | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Gate Drive (typical) | — | 4.5 V |