BSC0901NSIATMA1 vs IRFH5015TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0901NSIATMA1 sa pamamagitan ng Infineon at IRFH5015TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC0901NSIATMA1 | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 25V N-Channel Power MOSFET | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | 33 nC |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-TDSON-8-6 (5x6 mm with exposed pad) | 8-PQFN (5x6) SuperSO8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Temperature na Operasyon | — | -55C to +150C (TJ max) |