BSC093N15NS5ATMA1 vs BSZ110N08NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC093N15NS5ATMA1 sa pamamagitan ng Infineon at BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC093N15NS5ATMA1 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS 5 N-Channel Power MOSFET
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Packhaging SuperSO8 5x6 (PG-TDSON-8-7) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Wala sa Halogen [DATA_NEEDED: halogen free status] —
Part Family — OptiMOS 5
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Tc — 40 A
On-Resistance RDS(on) max — 11 mΩ
Power Dissipation (PD) at Tc — 50 W
Polarity — N-Channel
Configuration — Single MOSFET
Gate Drive Voltage (VGS) — [DATA_NEEDED: VGS rating]

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