BSC100N10NSFGATMA1 vs IAUC100N04S6L020ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC100N10NSFGATMA1 sa pamamagitan ng Infineon at IAUC100N04S6L020ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC100N10NSFGATMA1 IAUC100N04S6L020ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 6
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8 (SS08, 5x6 mm leadless)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55 °C to +175 °C (TJ)
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Tindminan RoHS Compliant Compliant
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)

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