BSC100N10NSFGATMA1 vs IAUC100N04S6L020ATMA1 对比
详细并排对比 BSC100N10NSFGATMA1 出自 Infineon 和 IAUC100N04S6L020ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 量产中Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ 量产中规格对比
| 参数 | BSC100N10NSFGATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.49 | $0.86 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | -55 °C to +175 °C (TJ) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |