BSO220N03MDGXUMA1 vs BSC0502NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSO220N03MDGXUMA1 sa pamamagitan ng Infineon at BSC0502NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon

BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon

BSO220N03MDGXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSO220N03MDGXUMA1 BSC0502NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS™ 3M —
Configuration Dual N-Channel (2N-CH), independent —
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D) 7.7 A —
On-State Resistance (R_DS(on)) 22 mΩ max @ V_GS=10V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: V_GS max rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/min/max] —
Total Gate Charge (Q_G) [DATA_NEEDED: Q_G nC] —
Power Dissipation (P_D) 1.4 W —
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55C to +150C
Packhaging PG-DSO-8 (SO-8 with exposed pad) PG-TDSON-8 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) —
Tindminan RoHS Compliant Compliant
Technology OptiMOS™ 3M (Trench MOSFET) OptiMOS 5 (Trench MOSFET)
Avalanche Rated Yes —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita