BSP89H6327XTSA1 vs BSR316PH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP89H6327XTSA1 sa pamamagitan ng Infineon at BSR316PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSP89H6327XTSA1 | BSR316PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET, enhancement mode | — |
| Technology | SIPMOS (planar power MOS) | — |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) | — |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A | — |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) | — |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (Tj) | -55 C to +150 C (junction) |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) | — |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | — |
| Packhaging | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SC59-3 (SC-59 / SOT-23 equivalent) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| dv/dt Rated | Yes | — |
| ESD Protection | Internal gate-source Zener | — |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR316PH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | P-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TA | — | -360 mA |
| Continuous Drain Current (ID) at TC | — | [DATA_NEEDED: ID at TC specific value] |
| On-State Resistance RDS(on) max | — | 1800 mOhm at VGS = -10 V |
| Gate Threshold Voltage VGS(th) | — | -1.7 V typical, -2.5 V max |
| Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (Tc) | — | 500 mW |
| Qualification | — | Automotive |
| Level ng MSL | — | 1 |
| Polarity | — | P-Channel |