BSZ024N04LS6ATMA1 vs BSZ018NE2LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ024N04LS6ATMA1 sa pamamagitan ng Infineon at BSZ018NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ024N04LS6ATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS (Infineon trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Ta) | 24 A | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Pulsed Drain Current (I_DM) | 130 A | — |
| R_DS(on) Max @ V_GS=10V | 2.4 mΩ | — |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | — |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | — |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | — |
| Input Capacitance (C_iss) | 1.8 nF | — |
| Output Capacitance (C_oss) | 19 pF | — |
| Power Dissipation (P_D, Ta) | 2.5 W | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Uri ng Pagpapasok | Surface Mount, top-side drain pad | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ018NE2LSIATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C |
| Lead-Free | — | Yes |