BSZ024N04LS6ATMA1 vs BSZ018NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ024N04LS6ATMA1 by Infineon and BSZ018NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ024N04LS6ATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.39 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS (Infineon trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Ta) | 24 A | β |
| Continuous Drain Current (I_D, Tc) | 40 A | β |
| Pulsed Drain Current (I_DM) | 130 A | β |
| R_DS(on) Max @ V_GS=10V | 2.4 mΞ© | β |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | β |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | β |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | β |
| Input Capacitance (C_iss) | 1.8 nF | β |
| Output Capacitance (C_oss) | 19 pF | β |
| Power Dissipation (P_D, Ta) | 2.5 W | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount, top-side drain pad | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ018NE2LSIATMA1 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at Ta=25C | β | 22 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | β | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 69 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Lead-Free | β | Yes |